Crosslinking of porous SiOCH films involving Si-O-C bonds: Impact of deposition and curing

Journal of Applied Physics

Volumn 108, Issue 12, 2010, Pages

  Gourhant, O ^a,b   Gerbaud, G ^c,d   Zenasni, A ^a   Favennec, L ^b   Gonon, P ^a   Jousseaume, V ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c CEA GRENOBLE   (France)

^d AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CROSSLINKING; CURING; DEPOSITION; ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; MAGNETIC RESONANCE; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

DEPOSITION TEMPERATURES; ELECTRICAL AND MECHANICAL PROPERTIES; FILM SHRINKAGE; MECHANICAL MEASUREMENTS; NANO-POROUS; POROGEN LOADING; POROGENS; SI-O-C BOND; SIOC-H FILM; SOLID-STATE NUCLEAR MAGNETIC RESONANCE; ULTRAVIOLET CURING;

MECHANICAL PROPERTIES;

EID: 78650896825     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3518512     Document Type: Article

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