A new approach to ultralow-k dielectrics

Semiconductor International

Volumn 26, Issue 12, 2003, Pages 56-60

  Calvert, Jeffrey M ^a   Gallagher, Michael K ^a  

^a SHIPLEY COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOPARTICLES; SELECTIVE ETCHING; SOLVENT CLEANING; ULTRALOW-K DIELECTRICS;

CHEMICAL VAPOR DEPOSITION; DEPOSITION; DIFFUSION IN SOLIDS; ELECTRIC INSULATORS; GATES (TRANSISTOR); PERMITTIVITY; PHOTOLITHOGRAPHY; PLASMA ETCHING; POROSITY;

DIELECTRIC MATERIALS;

EID: 3142552846     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

References (9)

1. L. Peters, "Has the Low-k Debate Been Settled?" Semiconductor International, January 2003, p. 17.
2. J. Chappell, "Oh Low K, Wherefore Art Thou, Low K?" Electronic News, March 14, 2003, www.electronicnews.com.
3. J.L. Hedrick, et al., "Templating Nanoporosity in Thin-Film Dielectric Insulators," Advanced Materials, September 1998, p. 1049.
4. J.H. Golden, C.J. Hawker and P.S. Ho, "Designing Porous Low-k Dielectrics," Semiconductor International, May 2001, p. 79.
5. M. Gallagher, et al., "Synthesis of Nanometer-Sized Polymer Particles and Their Use in the Development of a Porous Low-k Dielectric Material," Polymeric Materials Science and Engineering, 2002, Vol. 87, p. 442.
6. M.R. Baklanov and K.P. Mogilnikov, "Non-Destructive Characterization of Porosity and Pore-Size Distribution in Porous Low-k Dielectric Films," Materials for Advanced Metallization Conf., Vaals, Netherlands, March 3-6, 2002.
7. F. Iacopi, et al., "Factors Affecting an Efficient Sealing of Porous Low-k Dielectrics by Physical Vapor Deposition Ta(N) Thin Films," J. Applied Physics, Aug. 1, 2002, p. 1548.
8. L. Peters, "Making a Better Copper Barrier," Semiconductor International, March 2003, p. 50.
9. K. Maex, et al., "Low Dielectric Constant Materials for Microelectronics," J. Applied Physics, 2003, in press.