Novel dielectric deposition technology for advanced interconnect with air gap

Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Volumn , Issue , 2009, Pages 35-37

  Faguet, Jacques ^a   Lee, Eric ^b   Liu, Junjun ^b   Brcka, Jozef ^a   Akiyama, Osayuki ^a  

^a US Technology Development Center   (United States)

^b US Technology Development Center   (United States)

Author keywords

Air gap; FACVD; Interconnect; Low k

Indexed keywords

AIR GAP; AIR GAP STRUCTURES; AIR-GAPS; BACK END OF LINES; DEPOSITION MECHANISM; DIELECTRIC DEPOSITION; FACVD; FILM PROPERTIES; FREE FILMS; INTERCONNECT; LOW TEMPERATURE PLASMAS; LOW-K; ORGANOSILICATES; PLASMA-ENHANCED CVD; POROUS LOW-K;

DIELECTRIC MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; TECHNOLOGY; TEMPERATURE CONTROL;

PLASMA DEPOSITION;

EID: 70349439278     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2009.5090333     Document Type: Conference Paper

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