UV/EB cure mechanism for porous PECVD/SOD low-k SiCOH materials

2006 International Interconnect Technology Conference, IITC

Volumn , Issue , 2006, Pages 66-68

  Nakao, Shin Ichi ^a   Ushio, Jiro ^b   Ohno, Takahisa ^b   Hamada, Tomoyuki ^c   Kamigaki, Yoshiaki ^d   Kato, Manabu ^a   Yoneda, Katsumi ^a   Kondo, Seiichi ^a   Kobayashi, Nobuyoshi ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^d KAGAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DRYING; FILMS; MECHANISMS; OPTICAL INTERCONNECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; TECHNOLOGY;

CU INTERCONNECTS; CU-RE SYSTEM; DIELECTRIC CONSTANTS; EB CURING; FILM SHRINKAGE; INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE; MOISTURE REMOVAL; POROUS LOW-K; SIMULATED RESULTS; UV CURING; YOUNG'S MODULUS;

CURING;

EID: 50249107559     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2006.1648648     Document Type: Conference Paper

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