|
|
|
Volumn , Issue , 2008, Pages 115-121
|
|
Investigation of ULK (k=2.5) damage by direct CMP process for 45 run technology node
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
CHEMICAL MECHANICAL POLISHING;
CHEMICAL MODIFICATION;
CMOS INTEGRATED CIRCUITS;
DEGRADATION;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
METALLIZING;
NANOTECHNOLOGY;
PLASMA APPLICATIONS;
SURFACE ACTIVE AGENTS;
AQUEOUS SLURRIES;
CHEMICAL CONTAMINATIONS;
CHEMICAL DEGRADATIONS;
CHEMICAL INTERACTIONS;
CMOS TECHNOLOGY NODES;
DIELECTRIC CAPACITANCES;
DIELECTRIC CAPPING LAYERS;
DIRECT CMP;
ELECTRICAL PERFORMANCES;
K VALUES;
NEW GENERATIONS;
PLASMA TREATMENTS;
POROUS DIELECTRICS;
RC DELAYS;
REMOVAL RATES;
SUPERFICIAL LAYERS;
SURFACE HYDROPHOBICITIES;
TECHNOLOGY NODES;
ULTRA LOW K MATERIALS;
CHEMICAL POLISHING;
|
|
EID: 55349115059
PISSN: 15401766
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
|
Times cited : (5)
|
|
References (7)
|
