Dielectric constant contributions and structural properties of PECVD porous ULK: Impact of the elaboration process

Advanced Metallization Conference (AMC)

Volumn , Issue , 2009, Pages 537-542

  Gourhant, Olivier ^a   Jousseaume, Vincent ^b   Favennec, Laurent ^a   Zenasni, Aziz ^b   Gonon, Patrice ^c   Gerbaud, Guillaume ^d   Vincent, Gilbert ^c  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c Laboratoire Interdisciplinaire de Physique   (France)

^d CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; DEPOSITION TEMPERATURES; DESIGN FEATURES; DIELECTRIC CONSTANT MATERIALS; DIELECTRIC CONSTANTS; DIPOLAR CONTRIBUTION; ELECTRICAL CHARACTERIZATION; FILM SHRINKAGE; LABILE SPECIES; NETWORK REORGANIZATION; POROGENS; POROUS ULK; POST TREATMENT; PROCESS PARAMETERS; SILICON MATRIX; STRUCTURAL MODIFICATIONS; TEMPERATURE DEPENDENCE; TWO-STEP PROCESS; UV RADIATION; UV-CURING;

CERAMIC CAPACITORS; CURING; DIELECTRIC WAVEGUIDES; METALLIZING; MICROELECTRONICS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROSITY; POROUS MATERIALS; SILICON OXIDES; ULTRAVIOLET RADIATION;

DIELECTRIC MATERIALS;

EID: 70349897542     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. A. Zenasni et al, J. Appl. Phys. 102 (9) (2007).
2. M. Aimadeddine et al. in Robust integration of an ULK SiOCH dielectric (k=2.3) for high performance 32nm node BEOL (International Interconnect Technology Conference, 2007) pp. 175-177.
3. O. Gourhant et al. in Extendibility of the PECVD Porogen Approach for ULK Materials, (Mater. Res. Soc. Symp. Proc 990, San Francisco, CA, 2007) pp. 45-50.
4. D. R. Anderson, Analysis of Silicones, chapter 10 (Willey-Interscience, NY, 1974).
5. S. P. Mukherjee et al., Thin Solid Films 14, 105 (1972).
6. V. Jousseaume et al., J. Electrochem. Soc. 154 (5), G103 (2007).
7. P. Gonon et al, J. Electrochem. Soc., 150 (3), F47 (2003).