Permittivity and conductivity of low-dielectric-constant SiOC:H films deposited by plasma-enhanced chemical vapor deposition

Journal of the Electrochemical Society

Volumn 150, Issue 3, 2003, Pages

  Gonon, P ^a   Sylvestre, A ^a   Meynen, H ^b   Van Cotthem, L ^b  

^a UNIV GRENOBLE ALPES   (France)

^b Dow Corning SA Belgium   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT DENSITY; DIELECTRIC LOSSES; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; LEAKAGE CURRENTS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL EFFECTS; THIN FILMS;

CURRENT TRANSIENTS; GAS PRECURSOR; SILICON OXYCARBIDE;

SILICON COMPOUNDS;

EID: 0037352897     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1545467     Document Type: Article

References (25)

1. Semiconductor Industry Association, International Technology Roadmap for Semiconductors-Interconnect, 2001 ed., International SEMATECH, Austin, TX (2001).
2. M. Morgen, E. T. Ryan, J.-H. Zhao, T. Cho, and P. S. Ho, Annu. Rev. Mater. Sci., 30, 645 (2000)
3. G. Maier, Mater. Today, 4, 22 (2001)
4. L. Peters, Semicond. Int., 24, 66 (2001).
5. A. Nara and H. Itoh, Jpn. J. Appl. Phys., Part 1, 36, 1477 (1997).
6. A. Grill and V. Patel, J. Appl. Phys., 85, 3314 (1999).
7. A. Grill, Thin Solid Films, 398-399, 527 (2001).
8. H. Yang, D. J. Tweet, L. H. Stecker, W. Pan, D. R. Evans, and S. T. Hsu, Mater. Res. Soc. Symp. Proc., 612, D3.3.1 (2000).
9. T. Furusawa, D. Ryuzaki, R. Yoneyama, Y. Homma, and K. Hinode. J. Electrochem. Soc., 148, F175 (2001).
10. J.-H. Lee, N. Chopra, J. Ma, Y.-C. Lu, T.-F. Huang, R. Willecke, W.-F. Yau, D. Cheung, and E. Yieh, Mater. Res. Soc. Symp. Proc., 612, D3.4.1 (2000).
11. W. D. Gray, M. Loboda, H. Struyf, M. Lepage, M. Van Hove, R. A. Donaton, E. Sleeck, M. Stucchi, F. Lanckmans, T. Gao, W. Boullart, B. Coenegrachts, M. Maenhoudt, S. Vanhaelemeersch, H. Meynen, and K. Maex, Mater. Res. Soc. Symp. Proc., 612, D3.3.1 (2000).
12. M. Lepage, D. Shamiryan, M. Baklanov, H. Struyf, G. Mannaert, S. Vanhaelemeersch, K. Weidner, and H. Meynen, in Proceedings of the IEEE 2001 International Interconnect Technology Conference, Piscataway, NJ, p. 174, IEEE (2001).
13. E. S. Lopota, L. Young, and J. T. Felts, Mater. Res. Soc. Symp. Proc., 612, D5.3.1 (2000).
14. J. Y. Kim, M. S. Hwang, Y.-H. Kim, H. J. Kim, and Y. Lee, J. Appl. Phys., 90, 2469 (2001).
15. A. Grill and V. Patel, Appl. Phys. Lett., 79, 803 (2001)
16. A. Grill and V. Patel, Mater. Res. Soc. Symp. Proc., 612, D2.9.1 (2000).
17. D. G. Shamiryan, M. R. Baklanov, S. Vanhaelemeersch, and K. Maex, Electrochem. Solid-State Lett., 4, F3 (2001).
18. C. J. F. Böttcher and P. Bordewijk, Theory of Electric Polarization, 2nd ed., Elsevier, Amsterdam (1978)
19. H. Frölich, Theory of Dielectrics, 2nd ed., Oxford University Press, Oxford (1958).
20. A. Grill, L. Perraud, V. Patel, C. Jahnes, and S. Cohen, Mater. Res. Soc. Symp. Proc., 565, 107 (1999).
21. S. Takeishi, H. Kudo, R. Shinohara, M. Hoshino, S. Fukuyama, J. Yamaguchi, and M. Yamada, J. Electrochem. Soc., 144, 1797 (1997).
22. J. Lindmayer, J. Appl. Phys., 36, 196 (1965)
23. R. H. Walden, J. Appl. Phys., 43, 1178 (1972)
24. H. J. Wintle, J. Appl. Phys., 44, 2514 (1973).
25. J. J. O'Dwyer, The Theory of Electrical Conduction and Breakdown in Solid Dielectrics, Clarendon Press, Oxford (1973).