Characterisation and integration feasibility of JSR's low-k dielectric LKD-5109

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 25-33

  Das, A ^a   Kokubo, T ^d   Furukawa, Y ^b   Struyf, H ^a   Vos, I ^a   Sijmus, B ^a   Iacopi, F ^a   Van Aelst, J ^a   Le, Q T ^a   Carbonell, L ^a   Brongersma, S ^a   Maenhoudt, M ^a   Tokei, Z ^a   Vervoort, I ^a   Sleeckx, E ^a   Stucchi, M ^a   Schaekers, M ^a   Boullart, W ^a   Rosseel, E ^a   Van Hove, M ^a   Vanhaelemeersch, S ^a   Shiota, A ^d   Maex, K ^a,c   more..

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d JSR CORPORATION   (Japan)

Author keywords

Interlayer dielectrics; LKD 5109; MSQ based materials; Single damascene

Indexed keywords

CHEMICAL MECHANICAL POLISHING; MICROELECTRONICS; PERMITTIVITY; THERMODYNAMIC STABILITY;

INTERLAYER DIELECTRICS (ILD);

DIELECTRIC MATERIALS;

EID: 0036776682     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00768-2     Document Type: Conference Paper

References (7)

1. Closed-form expressions for interconnection delay, coupling, and crosstalk in VLSI's