Improving mechanical robustness of ultralow-k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening

Journal of Applied Physics

Volumn 107, Issue 10, 2010, Pages

  Urbanowicz, A M ^a,b   Vanstreels, K ^b   Verdonck, P ^b   Shamiryan, D ^b   De Gendt, S ^a,b   Baklanov, M R ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BRIDGING MECHANISM; CHEMICAL VAPOR DEPOSITED; DIELECTRIC CONSTANTS; INTER-LAYER DIELECTRICS; MECHANICAL ROBUSTNESS; NANO-SCALE PORES; OPEN POROSITY; POROGEN DECOMPOSITION; POROGENS; RANDOM NETWORK; ULTRA-LOW DIELECTRIC CONSTANT; ULTRALOW-K; YOUNG'S MODULUS;

DIELECTRIC MATERIALS; GLASS; MECHANICAL PROPERTIES; MICROELECTRONICS; PERMITTIVITY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROSITY; SOLVENTS;

HARDENING;

EID: 77952972912     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3428958     Document Type: Article

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