Porogen residues detection in optical properties of low-k dielectrics cured by ultraviolet radiation

Thin Solid Films

Volumn 518, Issue 15, 2010, Pages 4266-4272

  Marsik, Premysl ^a,b   Verdonck, Patrick ^b   De Roest, David ^c   Baklanov, Mikhail R ^b  

^a MASARYK UNIVERSITY   (Czech Republic)

^b IMEC   (Belgium)

^c ASM BELGIUM   (Belgium)

Author keywords

Ellipsometry; Low k dielectrics; Optical properties; Porogen residues; Porosity

Indexed keywords

ADDITIONAL SAMPLES; CARBON DOPED OXIDES; CURING CONDITION; CURING TIME; DIELECTRIC CONSTANTS; FOURIER TRANSFORM INFRARED; LOW DIELECTRIC CONSTANTS; LOW K DIELECTRICS; MATRIX; MATRIX MATERIALS; MATRIX PRECURSORS; OPTICAL RESPONSE; POROGEN DECOMPOSITION; POROGEN RESIDUES; POROGENS; POROUS DIELECTRICS; SENSITIVE DETECTION; THERMAL-ANNEALING; UV IRRADIATION; VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY;

CARBON FILMS; CURING; DIELECTRIC FILMS; FILM PREPARATION; FOURIER TRANSFORMS; OXIDE FILMS; PERMITTIVITY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROSITY; SPECTROSCOPIC ELLIPSOMETRY; ULTRAVIOLET RADIATION; WAVELET TRANSFORMS;

OPTICAL PROPERTIES;

EID: 77953012729     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.12.110     Document Type: Article

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