UV-hardened high-modulus CVD-ULK material for 45-nm node Cu/lowk interconnects with homogeneous dielectric structures

Proceedings of the IEEE 2005 International Interconnect Technology Conference, IITC

Volumn , Issue , 2005, Pages 45-47

  Furusawa, Takeshi ^a   Miura, Noriko ^a   Matsumoto, Masahiro ^a   Goto, Kinya ^a   Hashii, Sinobu ^b   Fujiwara, Yuji ^a   Yoshikawa, Kazunori ^a   Yonekura, Kazumasa ^a   Asano, Yoshinobu ^a   Ichiki, Tsutomu ^a   Kawanabe, Naoki ^a   Matsuzawa, Tomoo ^a   Matsuura, Masazumi ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b Renesas Semiconductor Engineering Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HARDENING; LARGE SCALE SYSTEMS; PERFORMANCE; ULTRAVIOLET RADIATION;

DIELECTRIC BARRIER; DIELECTRIC STRUCTURES; ELECTRICAL PERFORMANCE;

DIELECTRIC MATERIALS;

EID: 28244436226     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. A. Kajita et al, Proc. of IITC, pp. 9 (2003)
2. T. Nakamura et al., Proc. of IITC, pp.175 (2004)