Ultralow k using a plasma enhanced chemical vapor deposition porogen approach: Matrix structure and porogen loading influences

Journal of Applied Physics

Volumn 102, Issue 6, 2007, Pages

  Favennec, Laurent ^a   Jousseaume, Vincent ^b   Gerbaud, Guillaume ^c   Zenasni, Aziz ^b   Passemard, Ǵrard ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; INTEGRATED CIRCUITS; INTERCONNECTION NETWORKS; MICROELECTRONICS; MICROPROCESSOR CHIPS; SILICON COMPOUNDS;

HYBRID FILM DEPOSITION; INTEGRATED CIRCUIT PERFORMANCE; MATRIX STRUCTURE; POROGEN LOADING INFLUENCES;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 34848869637     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2783963     Document Type: Article

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