Electrical properties of low-dielectric-constant SiOC(-H) films prepared by plasma-enhanced chemical vapor deposition from methyltriethoxysilane and O 2

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 10 B, 2006, Pages 8435-8439

  Navamathavan, Rangaswamy ^a   Oh, Kyoung Suk ^a   Chang, Sil Yang ^a   Kim, Seung Hyun ^a   Jang, Yong Jun ^a   Jung, An Su ^a   Lee, Heon Ju ^a   Lee, Kwang Man ^a   Choi, Chi Kyu ^a  

^a Jeju National University   (South Korea)

Author keywords

FTIR; Low k dielectrics; MTES; PECVD; SiOC( H) films

Indexed keywords

ANNEALING; FILM THICKNESS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; THERMODYNAMIC STABILITY; THIN FILMS;

BONDING CONFIGURATIONS; FIELD-EMISSION SCANNING ELECTRON MICROSCOPY (FESEM); METHYLTRIETHOXYSILANE (MTES);

SILICON COMPOUNDS;

EID: 34547908530     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.8435     Document Type: Article

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