Low-k Si-O-C-H composite films prepared by plasma-enhanced chemical vapor deposition using bis-trimethylsilylmethane precursor

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1216-1219

  Kim, Yoon Hae ^a   Lee, Seok Kiu ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; CURRENT DENSITY; ELECTRON GAS; METHANE; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; SILICON WAFERS; THERMAL EFFECTS;

BISTRIMETHYLSILYLMETHANE;

DIELECTRIC FILMS;

EID: 0034228666     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582328     Document Type: Article

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