Porosity in plasma enhanced chemical vapor deposited SiCoH dielectrics: A comparative study

Journal of Applied Physics

Volumn 94, Issue 5, 2003, Pages 3427-3435

  Grill, A ^a   Patel, V ^a   Rodbell, K P ^a   Huang, E ^a   Baklanov, M R ^b   Mogilnikov, K P ^b   Toney, M ^c   Kim, H C ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IMEC   (Belgium)

^c IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PORE SIZE; POROSITY; POSITRON ANNIHILATION SPECTROSCOPY; X RAY SCATTERING;

FILM POROSITY;

SILICON COMPOUNDS;

EID: 0141496355     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1599957     Document Type: Article

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