Ultralow k films by using a plasma-enhanced chemical vapor deposition porogen approach: Study of the precursor reaction mechanisms

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 5, 2008, Pages 1343-1354

  Castex, A ^a   Jousseaume, V ^b   Deval, J ^a   Bruat, J ^a   Favennec, L ^c   Passemard, G ^c  

^a AIR LIQUIDE   (France)

^b CEA LETI   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ANNEALING; CERAMIC CAPACITORS; COMPUTER NETWORKS; DIELECTRIC MATERIALS; DIELECTRIC WAVEGUIDES; DISSOCIATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; HYDROCARBONS; INFRARED SPECTROSCOPY; MASS SPECTROMETERS; MASS SPECTROMETRY; MATRIX ALGEBRA; MOLECULES; PERMITTIVITY; PHOTORESISTS; PLASMA DEPOSITION; PLASMAS; QUANTUM CHEMISTRY; RATE CONSTANTS; SILANES; SILICON; SILICON COMPOUNDS; SILICONES; SPECTROSCOPIC ANALYSIS; VAPORS;

POROGEN;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 50849129130     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2953704     Document Type: Article

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