Comparison between E-beam and ultraviolet curing to perform porous a-SiOC:H

Journal of the Electrochemical Society

Volumn 154, Issue 5, 2007, Pages

  Jousseaume, V ^a,f   Zenasni, A ^a   Favennec, L ^b   Gerbaud, G ^c   Bardet, M ^c   Simon, J P ^d   Humbert, A ^e  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c CEA GRENOBLE   (France)

^d UNIV GRENOBLE ALPES   (France)

^e NXP SEMICONDUCTORS   (Netherlands)

^f ELECTROCHEMICAL SOCIETY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INTERLAYER DIELECTRICS; MICROELECTRONICS INDUSTRY; POROUS FILMS; THERMAL CURING;

CURING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROELECTRONICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROSITY; ULTRAVIOLET RADIATION;

DIELECTRIC FILMS;

EID: 34047185280     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2667980     Document Type: Article

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