Adjusting the skeleton and pore structure of porous SiCOH dielectrics

Journal of the Electrochemical Society

Volumn 156, Issue 10, 2009, Pages

  Gates, S M ^a   Dubois, G ^b   Ryan, E T ^c   Grill, A ^a   Liu, M ^d   Gidley, D ^d  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

^d UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION POROSIMETRY; CARBON CONTENT; CARBOSILANES; FIGURE OF MERIT; PLOT ANALYSIS; PORE CONNECTIVITY; POSITRON ANNIHILATION LIFETIME SPECTROSCOPY; TOLUENE ADSORPTION; ULTRAMICROPORES;

ADSORPTION; DIELECTRIC MATERIALS; MICROPOROSITY; PLASMA DEPOSITION; PORE STRUCTURE; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; TOLUENE;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 69549086541     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3186029     Document Type: Article

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