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Volumn 80, Issue SUPPL., 2005, Pages 345-348

Bias-stress-induced evolution of the dielectric properties of porous-ULK/ copper advanced interconnects

Author keywords

Conduction; Defect; Dielectric; Poole Frenkel; Porous; Reliability; SiCOH; Transport; ULK

Indexed keywords

CAPACITANCE; COPPER; CRYSTAL DEFECTS; CURRENT DENSITY; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC POTENTIAL; INTEGRAL EQUATIONS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; PERMITTIVITY; POROUS MATERIALS; STRESSES;

EID: 19944379143     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.089     Document Type: Conference Paper
Times cited : (9)

References (5)
  • 5
    • 85069090002 scopus 로고    scopus 로고
    • Semiconductor Industry Association, San Jose, CA
    • (ITRS2003) Semiconductor Industry Association, San Jose, CA, http://public.itrs.net
    • ITRS2003


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.