-
1
-
-
0042224960
-
-
10.1146/annurev.physchem.51.1.623 0066-426X
-
Jonsson H 2000 Annu. Rev. Phys. Chem. 51 62353
-
(2000)
Annu. Rev. Phys. Chem.
, vol.51
, Issue.1
, pp. 623-653
-
-
Jonsson, H.1
-
2
-
-
77949645531
-
-
10.1021/cr900295b 0009-2665
-
Sautet P and Delbecq F 2010 Chem. Rev. 110 1788806
-
(2010)
Chem. Rev.
, vol.110
, Issue.3
, pp. 1788-1806
-
-
Sautet, P.1
Delbecq, F.2
-
3
-
-
0033894303
-
Atomic-scale computational materials science
-
DOI 10.1016/S1359-6454(99)00288-8
-
Hafner J 2000 Acta Mater. 48 7192 (Pubitemid 30558396)
-
(2000)
Acta Materialia
, vol.48
, Issue.1
, pp. 71-92
-
-
Hafner, J.1
-
6
-
-
65249169295
-
-
10.1021/jp806027m 1932-7447 C
-
Kwon J, Dai M, Halls M D, Langereis E, Chabal Y J and Gordon R G 2009 J. Phys. Chem. C 113 65460
-
(2009)
J. Phys. Chem.
, vol.113
, Issue.2
, pp. 654-660
-
-
Kwon, J.1
Dai, M.2
Halls, M.D.3
Langereis, E.4
Chabal, Y.J.5
Gordon, R.G.6
-
9
-
-
84055222272
-
-
10.1021/ic201751q 0020-1669
-
Norman J A T et al 2011 Inorg. Chem. 50 123968
-
(2011)
Inorg. Chem.
, vol.50
, Issue.24
, pp. 12396-12398
-
-
Norman, J.A.T.1
-
11
-
-
77955909528
-
-
10.1021/jp101363r 1932-7447 C
-
Li K, Li S, Li N, Dixon D A and Klein T M 2010 J. Phys. Chem. C 114 1406175
-
(2010)
J. Phys. Chem.
, vol.114
, Issue.33
, pp. 14061-14075
-
-
Li, K.1
Li, S.2
Li, N.3
Dixon, D.A.4
Klein, T.M.5
-
14
-
-
79956014640
-
Quantum chemical study of the mechanism of aluminum oxide atomic layer deposition
-
DOI 10.1063/1.1473237
-
Widjaja Y and Musgrave C B 2002 Appl. Phys. Lett. 80 3304 (Pubitemid 34599971)
-
(2002)
Applied Physics Letters
, vol.80
, Issue.18
, pp. 3304-3306
-
-
Widjaja, Y.1
Musgrave, C.B.2
-
17
-
-
77953488967
-
-
10.1021/jp101387g 1932-7447 C
-
Xu K and Ye P D 2010 J. Phys. Chem. C 114 1050511
-
(2010)
J. Phys. Chem.
, vol.114
, Issue.23
, pp. 10505-10511
-
-
Xu, K.1
Ye, P.D.2
-
18
-
-
14644420953
-
Predictive process design: A theoretical model of atomic layer deposition
-
DOI 10.1016/j.commatsci.2004.12.032, PII S0927025604003337, Proceedings of the E-MRS 2004 Spring Meeting: Symposium H: Atomic materials Design: Modelling and Characterization
-
Elliott S D 2005 Comput. Mater. Sci. 33 205 (Pubitemid 40319652)
-
(2005)
Computational Materials Science
, vol.33
, Issue.1-3
, pp. 20-25
-
-
Elliott, S.D.1
-
21
-
-
80052332142
-
-
10.1021/jp206070y 1932-7447 C
-
Delabie A et al 2011 J. Phys. Chem. C 115 1752332
-
(2011)
J. Phys. Chem.
, vol.115
, Issue.35
, pp. 17523-17532
-
-
Delabie, A.1
-
23
-
-
50649101905
-
-
10.1016/j.apsusc.2008.05.237 0169-4332
-
Ren J, Zhou G, Hu Y, Jiang H and Zhang D 2008 Appl. Surf. Sci. 254 711521
-
(2008)
Appl. Surf. Sci.
, vol.254
, Issue.22
, pp. 7115-7121
-
-
Ren, J.1
Zhou, G.2
Hu, Y.3
Jiang, H.4
Zhang, D.5
-
28
-
-
84859153481
-
-
10.1021/cm203362d 0897-4756
-
Lamagna L et al 2012 Chem. Mater. 24 108090
-
(2012)
Chem. Mater.
, vol.24
, Issue.6
, pp. 1080-1090
-
-
Lamagna, L.1
-
29
-
-
27844482427
-
3 on the hydroxylated GaAs(001)-4 2 surface
-
DOI 10.1088/0953-8984/17/48/005, PII S0953898405066701
-
Lu H-L, Chen W, Ding S-J, Xu M, Zhang D W and Wang L-K 2005 J. Phys.: Condens. Matter 17 751722 (Pubitemid 41640725)
-
(2005)
Journal of Physics Condensed Matter
, vol.17
, Issue.48
, pp. 7517-7522
-
-
Lu, H.-L.1
Chen, W.2
Ding, S.-J.3
Xu, M.4
Zhang, D.W.5
Wang, L.-K.6
-
30
-
-
78049314956
-
-
10.1063/1.3487737 0021-9606 154704
-
Clemens J B, Chagarov E A, Holland M, Droopad R, Shen J and Kummel A C 2010 J. Chem. Phys. 133 154704
-
(2010)
J. Chem. Phys.
, vol.133
, Issue.15
-
-
Clemens, J.B.1
Chagarov, E.A.2
Holland, M.3
Droopad, R.4
Shen, J.5
Kummel, A.C.6
-
32
-
-
84862738978
-
-
0256-307X 053101
-
Yu S, Qing-Qing S, Lin D, Han L, Shi-Jin D and Wei Z 2009 Chin. Phys. Lett. 26 053101
-
(2009)
Chin. Phys. Lett.
, vol.26
, Issue.5
-
-
Yu, S.1
Qing-Qing, S.2
Lin, D.3
Han, L.4
Shi-Jin, D.5
Wei, Z.6
-
33
-
-
84862749300
-
-
0256-307X 053101
-
Shi Y, Sun Q-Q, Dong L, Liu H, Ding S-J and Zhang W 2009 Chin. Phys. Lett. 26 053101
-
(2009)
Chin. Phys. Lett.
, vol.26
, Issue.5
-
-
Shi, Y.1
Sun, Q.-Q.2
Dong, L.3
Liu, H.4
Ding, S.-J.5
Zhang, W.6
-
34
-
-
77953488967
-
-
10.1021/jp101387g 1932-7447 C
-
Xu K and Ye P D 2010 J. Phys. Chem. C 114 1050511
-
(2010)
J. Phys. Chem.
, vol.114
, Issue.23
, pp. 10505-10511
-
-
Xu, K.1
Ye, P.D.2
-
36
-
-
72249083950
-
-
10.1149/1.3246802 0013-4651
-
Nyns L, Delabie A, Pourtois G, Van Elshocht S, Vinckier C and De Gendt S 2010 J. Electrochem. Soc. 157 G712
-
(2010)
J. Electrochem. Soc.
, vol.157
, Issue.1
, pp. 7-12
-
-
Nyns, L.1
Delabie, A.2
Pourtois, G.3
Van Elshocht, S.4
Vinckier, C.5
De Gendt, S.6
-
38
-
-
33748258535
-
Ozone-based atomic layer deposition of alumina from TMA: Growth, morphology, and reaction mechanism
-
DOI 10.1021/cm0608903
-
Elliott S D, Scarel G, Wiemer C, Fanciulli M and Pavia G 2006 Chem. Mater. 18 376473 (Pubitemid 44318557)
-
(2006)
Chemistry of Materials
, vol.18
, Issue.16
, pp. 3764-3773
-
-
Elliott, S.D.1
Scarel, G.2
Wiemer, C.3
Fanciulli, M.4
Pavia, G.5
-
41
-
-
33751256286
-
x on a (110) surface of c-BN: A quantum-mechanical DFT study
-
DOI 10.1016/j.diamond.2006.04.015, PII S0925963506001142
-
Arvidsson I and Larsson K 2007 Diamond Relat. Mater. 16 1317 (Pubitemid 44793188)
-
(2007)
Diamond and Related Materials
, vol.16
, Issue.1
, pp. 131-137
-
-
Arvidsson, I.1
Larsson, K.2
-
43
-
-
0030195668
-
-
10.1016/0039-6028(96)00026-X 0039-6028
-
Hukka T 1996 Surf. Sci. 359 21326
-
(1996)
Surf. Sci.
, vol.359
, Issue.1-3
, pp. 213-226
-
-
Hukka, T.1
-
45
-
-
84859142179
-
-
10.1021/cm2029189 0897-4756
-
Kwon J, Saly M, Halls M D, Kanjolia R K and Chabal Y J 2012 Chem. Mater. 24 102530
-
(2012)
Chem. Mater.
, vol.24
, Issue.6
, pp. 1025-1030
-
-
Kwon, J.1
Saly, M.2
Halls, M.D.3
Kanjolia, R.K.4
Chabal, Y.J.5
-
46
-
-
62449298108
-
-
10.1002/qua.21880 0020-7608
-
Li J et al 2009 Int. J. Quantum Chem. 109 75663
-
(2009)
Int. J. Quantum Chem.
, vol.109
, Issue.4
, pp. 756-763
-
-
Li, J.1
-
47
-
-
84862743919
-
-
0567-7351
-
Li J-Y, Wu J-P, Zhou C-G, Yao S-J and Han B 2008 Acta Chim. Sin. 66 1659
-
(2008)
Acta Chim. Sin.
, vol.66
, pp. 165-169
-
-
Li, J.-Y.1
Wu, J.-P.2
Zhou, C.-G.3
Yao, S.-J.4
Han, B.5
-
48
-
-
77956413575
-
-
10.1021/la903212c 0743-7463
-
Dai M, Kwon J, Halls M D, Gordon R G and Chabal Y J 2010 Langmuir 26 39117
-
(2010)
Langmuir
, vol.26
, Issue.6
, pp. 3911-3917
-
-
Dai, M.1
Kwon, J.2
Halls, M.D.3
Gordon, R.G.4
Chabal, Y.J.5
-
49
-
-
65249191431
-
-
10.1021/ie800903h 0888-5885
-
Orimoto Y, Toyota A, Furuya T, Nakamura H and Uehara M 2009 Indust. Eng. Chem. Res. 48 338997
-
(2009)
Indust. Eng. Chem. Res.
, vol.48
, Issue.7
, pp. 3389-3397
-
-
Orimoto, Y.1
Toyota, A.2
Furuya, T.3
Nakamura, H.4
Uehara, M.5
-
50
-
-
0042357582
-
-
10.1016/S0169-4332(98)00330-4 0169-4332
-
Mårtensson P 1998 Appl. Surf. Sci. 136 13746
-
(1998)
Appl. Surf. Sci.
, vol.136
, Issue.1-2
, pp. 137-146
-
-
Mårtensson, P.1
-
51
-
-
0343634274
-
-
10.1016/S0169-4332(99)00141-5 0169-4332
-
Mårtensson P 1999 Appl. Surf. Sci. 148 916
-
(1999)
Appl. Surf. Sci.
, vol.148
, Issue.1-2
, pp. 9-16
-
-
Mårtensson, P.1
-
53
-
-
34347387748
-
Interaction of copper organometallic precursors with barrier layers of Ti, Ta and W and their nitrides: A first-principles molecular dynamics study
-
DOI 10.1007/s00894-007-0187-6, International conference and workshop: Modeling and Design of Molecular Materials, 10-15 September 2006, Wrocklaw, Poland
-
Machado E et al 2007 J. Mol. Model. 13 8614 (Pubitemid 47023411)
-
(2007)
Journal of Molecular Modeling
, vol.13
, Issue.6-7
, pp. 861-864
-
-
Machado, E.1
Kaczmarski, M.2
Braida, B.3
Ordejon, P.4
Garg, D.5
Norman, J.6
Cheng, H.7
-
54
-
-
23844472694
-
First-principles analyses and predictions on the reactivity of barrier layers of Ta and TaN toward organometallic precursors for deposition of copper films
-
DOI 10.1021/la050164z
-
Machado E, Kaczmarski M, Ordejón P, Garg D, Norman J and Cheng H 2005 Langmuir 21 760814 (Pubitemid 41156784)
-
(2005)
Langmuir
, vol.21
, Issue.16
, pp. 7608-7614
-
-
Machado, E.1
Kaczmarski, M.2
Ordejon, P.3
Garg, D.4
Norman, J.5
Cheng, H.6
-
55
-
-
33748077091
-
Molecular view of copper deposition chemistry: (Hexafluoroacetylacetonate)Cu(vinyltrimethylsilane) on a Si(1 0 0)-21 surface
-
DOI 10.1016/j.susc.2006.06.019, PII S0039602806007308
-
Pirolli L and Teplyakov A V 2006 Surf. Sci. 600 331320 (Pubitemid 44294899)
-
(2006)
Surface Science
, vol.600
, Issue.16
, pp. 3313-3320
-
-
Pirolli, L.1
Teplyakov, A.V.2
-
56
-
-
77949379113
-
-
10.1021/ic902247w 0020-1669
-
Coyle J P, Johnson P A, DiLabio G A, Barry S T and Müller J 2010 Inorg. Chem. 49 284450
-
(2010)
Inorg. Chem.
, vol.49
, Issue.6
, pp. 2844-2850
-
-
Coyle, J.P.1
Johnson, P.A.2
Dilabio, G.A.3
Barry, S.T.4
Müller, J.5
-
60
-
-
0036677581
-
Atomic layer deposition of hafnium oxide: A detailed reaction mechanism from first principles
-
DOI 10.1063/1.1495847
-
Widjaja Y and Musgrave C B 2002 J. Chem. Phys. 117 1931 (Pubitemid 34916770)
-
(2002)
Journal of Chemical Physics
, vol.117
, Issue.5
, pp. 1931-1934
-
-
Widjaja, Y.1
Musgrave, C.B.2
-
62
-
-
0037370121
-
-
10.1016/S0927-0256(02)00428-7 0927-0256
-
Estève A 2003 Comput. Mater. Sci. 27 7580
-
(2003)
Comput. Mater. Sci.
, vol.27
, Issue.1-2
, pp. 75-80
-
-
Estève, A.1
-
64
-
-
33750144498
-
2 atomic layer deposition on the hydroxylated GaAs (001) -42 surface
-
DOI 10.1063/1.2370425
-
Lu H-L, Xu M, Ding S-J, Chen W, Zhang D W and Wang L-K 2006 Appl. Phys. Lett. 89 162905 (Pubitemid 44601706)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.16
, pp. 162905
-
-
Lu, H.-L.1
Xu, M.2
Ding, S.-J.3
Chen, W.4
Zhang, D.W.5
Wang, L.-K.6
-
65
-
-
15744388300
-
Hafnium oxide and zirconium oxide atomic layer deposition: Initial precursor and potential side-reaction product pathways with H/Si(100)-21
-
DOI 10.1021/jp048663g
-
Fenno R D, Halls M D and Raghavachari K 2005 J. Phys. Chem. B 109 496976 (Pubitemid 40407719)
-
(2005)
Journal of Physical Chemistry B
, vol.109
, Issue.11
, pp. 4969-4976
-
-
Fenno, R.D.1
Halls, M.D.2
Raghavachari, K.3
-
66
-
-
52349114918
-
-
10.1039/b807205a 0959-9428
-
Black K et al 2008 J. Mater. Chem. 18 4561
-
(2008)
J. Mater. Chem.
, vol.18
, Issue.38
, pp. 4561
-
-
Black, K.1
-
68
-
-
18244376110
-
Atomic layer deposition of hafnium nitrides using ammonia and alkylamide precursors
-
DOI 10.1016/j.cplett.2005.03.084, PII S0009261405004240
-
Xu Y and Musgrave C 2005 Chem. Phys. Lett. 407 2725 (Pubitemid 40626586)
-
(2005)
Chemical Physics Letters
, vol.407
, Issue.4-6
, pp. 272-275
-
-
Xu, Y.1
Musgrave, C.B.2
-
70
-
-
40549138165
-
Insights into crystalline preorganization of gas-phase precursors: Densification mechanisms
-
DOI 10.1021/cm071740a
-
Olivier S, Ducéré J-M, Mastail C, Landa G, Estève A and Rouhani M D 2008 Chem. Mater. 20 155560 (Pubitemid 351363084)
-
(2008)
Chemistry of Materials
, vol.20
, Issue.4
, pp. 1555-1560
-
-
Olivier, S.1
Ducere, J.-M.2
Mastail, C.3
Landa, G.4
Esteve, A.5
Rouhani, M.D.6
-
71
-
-
34547671039
-
Improving ALD growth rate via ligand basicity: Quantum chemical calculations on lanthanum precursors
-
DOI 10.1016/j.surfcoat.2007.04.116, PII S0257897207004914
-
Elliott S D 2007 Surf. Coat. Technol. 201 907681 (Pubitemid 47209422)
-
(2007)
Surface and Coatings Technology
, vol.201
, Issue.22-23 SPEC. ISS.
, pp. 9076-9081
-
-
Elliott, S.D.1
-
75
-
-
77951683045
-
-
10.1021/la904122e 0743-7463
-
Lee W et al 2010 Langmuir 26 684552
-
(2010)
Langmuir
, vol.26
, Issue.9
, pp. 6845-6852
-
-
Lee, W.1
-
76
-
-
82155192935
-
-
10.1021/jp2048663 1932-7447 C
-
Chen S, Fang G, Qian X, Li A and Ma J 2011 J. Phys. Chem. C 115 2336373
-
(2011)
J. Phys. Chem.
, vol.115
, Issue.47
, pp. 23363-23373
-
-
Chen, S.1
Fang, G.2
Qian, X.3
Li, A.4
Ma, J.5
-
77
-
-
0006509872
-
-
10.1021/jp991353r 1520-6106 B
-
Okamoto Y 1999 J. Phys. Chem. B 103 110747
-
(1999)
J. Phys. Chem.
, vol.103
, Issue.50
, pp. 11074-11077
-
-
Okamoto, Y.1
-
78
-
-
0242542144
-
-
10.1016/0039-6028(89)90468-8 0039-6028
-
Hirva P and Pakkanen T 1989 Surf. Sci. 220 13751
-
(1989)
Surf. Sci.
, vol.220
, Issue.1
, pp. 137-151
-
-
Hirva, P.1
Pakkanen, T.2
-
79
-
-
2342648106
-
-
10.1016/j.susc.2004.03.029 0039-6028
-
Mui C 2004 Surf. Sci. 557 15970
-
(2004)
Surf. Sci.
, vol.557
, Issue.1-3
, pp. 159-170
-
-
Mui, C.1
-
81
-
-
39749155139
-
2: A comparative study by density functional theory
-
DOI 10.1016/j.tsf.2007.10.107, PII S0040609007017920
-
Ren J, Hu Y, Wang J, Jiang H and Zhang D 2008 Thin Solid Films 516 296672 (Pubitemid 351291698)
-
(2008)
Thin Solid Films
, vol.516
, Issue.10
, pp. 2966-2972
-
-
Ren, J.1
Hu, Y.2
Wang, J.3
Jiang, H.4
Zhang, D.W.5
-
82
-
-
34548583680
-
Atomic layer deposition and chemical vapor deposition precursor selection method application to strontium and barium precursors
-
DOI 10.1021/jp062568l
-
Holme T P and Prinz F B 2007 J. Phys. Chem. A 111 814751 (Pubitemid 47387830)
-
(2007)
Journal of Physical Chemistry A
, vol.111
, Issue.33
, pp. 8147-8151
-
-
Holme, T.P.1
Prinz, F.B.2
-
83
-
-
79952487760
-
-
10.1016/j.mee.2010.06.037 0167-9317
-
Xie Q et al 2011 Microelectron. Eng. 88 64650
-
(2011)
Microelectron. Eng.
, vol.88
, Issue.5
, pp. 646-650
-
-
Xie, Q.1
-
85
-
-
77249108388
-
-
10.1021/ic902411h 0020-1669
-
Wasslen Y A et al 2010 Inorg. Chem. 49 197682
-
(2010)
Inorg. Chem.
, vol.49
, Issue.4
, pp. 1976-1982
-
-
Wasslen, Y.A.1
-
91
-
-
33646386394
-
-
10.1021/jp060367b 1520-6106 B
-
Hu Z and Turner C H 2006 J. Phys. Chem. B 110 833747
-
(2006)
J. Phys. Chem.
, vol.110
, Issue.16
, pp. 8337-8347
-
-
Hu, Z.1
Turner, C.H.2
-
93
-
-
35648995895
-
Atomic layer deposition of Ti O2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2 O
-
DOI 10.1063/1.2798384
-
Xie Q et al 2007 J. Appl. Phys. 102 083521 (Pubitemid 350025635)
-
(2007)
Journal of Applied Physics
, vol.102
, Issue.8
, pp. 083521
-
-
Xie, Q.1
Jiang, Y.-L.2
Detavernier, C.3
Deduytsche, D.4
Van Meirhaeghe, R.L.5
Ru, G.-P.6
Li, B.-Z.7
Qu, X.-P.8
-
94
-
-
34147098455
-
Chemistry of diffusion barrier film formation: Adsorption and dissociation of tetrakis(dimethylamino)titanium on Si(100)-21
-
DOI 10.1021/jp067929b
-
Rodriguez-Reyes J C F and Teplyakov A V 2007 J. Phys. Chem. C 111 48008 (Pubitemid 46573525)
-
(2007)
Journal of Physical Chemistry C
, vol.111
, Issue.12
, pp. 4800-4808
-
-
Rodriguez-Reyes, J.C.F.1
Teplyakov, A.V.2
-
96
-
-
60949088427
-
-
10.1016/j.apsusc.2008.12.077 0169-4332
-
Ren J 2009 Appl. Surf. Sci. 255 57425
-
(2009)
Appl. Surf. Sci.
, vol.255
, Issue.11
, pp. 5742-5745
-
-
Ren, J.1
-
98
-
-
1942484914
-
-
10.1016/j.commatsci.2004.01.012 0927-0256
-
Petersen M 2004 Comput. Mater. Sci. 30 7780
-
(2004)
Comput. Mater. Sci.
, vol.30
, Issue.1-2
, pp. 77-80
-
-
Petersen, M.1
-
99
-
-
15444377451
-
2 atomic layer deposition on Ge/Si(100)-(21) surface
-
DOI 10.1016/j.tsf.2004.11.141, PII S0040609004017201
-
Chen W et al 2005 Thin Solid Films 479 736 (Pubitemid 40394027)
-
(2005)
Thin Solid Films
, vol.479
, Issue.1-2
, pp. 73-76
-
-
Chen, W.1
Zhang, D.W.2
Ren, J.3
Lu, H.-L.4
Zhang, J.-Y.5
Xu, M.6
Wang, J.-T.7
Wang, L.-K.8
-
100
-
-
0347604215
-
-
10.1016/j.susc.2003.10.056 0039-6028
-
Deminsky M 2004 Surf. Sci. 549 6786
-
(2004)
Surf. Sci.
, vol.549
, Issue.1
, pp. 67-86
-
-
Deminsky, M.1
-
102
-
-
0036577045
-
2O on the Si(1 0 0) surface: Initial reactions and surface structures
-
DOI 10.1016/S0927-0256(02)00192-1, PII S0927025602001921
-
Brodskii V, Rykova E, Bagatur'yants A and Korkin A 2002 Comput. Mater. Sci. 24 27883 (Pubitemid 34715379)
-
(2002)
Computational Materials Science
, vol.24
, Issue.1-2
, pp. 278-283
-
-
Brodskii, V.V.1
Rykova, E.A.2
Bagatur'yants, A.A.3
Korkin, A.A.4
-
103
-
-
0942300334
-
-
10.1016/j.susc.2003.12.030 0039-6028
-
Han J H, Gao G, Widjaja Y, Garfunkel E and Musgrave C B 2004 Surf. Sci. 550 199212
-
(2004)
Surf. Sci.
, vol.550
, Issue.1-3
, pp. 199-212
-
-
Han, J.H.1
Gao, G.2
Widjaja, Y.3
Garfunkel, E.4
Musgrave, C.B.5
-
104
-
-
14644404380
-
2 atomic layer deposition
-
DOI 10.1016/j.commatsci.2004.12.060, PII S0927025604003398, Proceedings of the E-MRS 2004 Spring Meeting: Symposium H: Atomic materials Design: Modelling and Characterization
-
Jeloaica L, Esteve A, Dkhissi A, Esteve D and Djafari Rouhani M 2005 Comput. Mater. Sci. 33 5965 (Pubitemid 40319658)
-
(2005)
Computational Materials Science
, vol.33
, Issue.1-3
, pp. 59-65
-
-
Jeloaica, L.1
Esteve, A.2
Dkhissi, A.3
Esteve, D.4
Djafari-Rouhani, M.5
-
105
-
-
79952735910
-
-
10.1016/j.tsf.2011.01.278 0040-6090
-
Ren J, Cui C, Zhou G, Liu Y, Hu Y and Wang B 2011 Thin Solid Films 519 371621
-
(2011)
Thin Solid Films
, vol.519
, Issue.11
, pp. 3716-3721
-
-
Ren, J.1
Cui, C.2
Zhou, G.3
Liu, Y.4
Hu, Y.5
Wang, B.6
-
107
-
-
37549060993
-
-
10.1063/1.2824814 0003-6951 253123
-
Elam J W, Pellin M J, Elliott S D, Zydor A, Faia M C and Hupp J T 2007 Appl. Phys. Lett. 91 253123
-
(2007)
Appl. Phys. Lett.
, vol.91
, Issue.25
-
-
Elam, J.W.1
Pellin, M.J.2
Elliott, S.D.3
Zydor, A.4
Faia, M.C.5
Hupp, J.T.6
-
108
-
-
31444449925
-
Ab initio calculations of the reaction mechanisms for metal-nitride deposition from organo-metallic precursors onto functionalized self-assembled monolayers
-
DOI 10.1021/ja054685k
-
Haran M, Engstrom J R and Clancy P 2006 J. Am. Chem. Soc. 128 83647 (Pubitemid 43153033)
-
(2006)
Journal of the American Chemical Society
, vol.128
, Issue.3
, pp. 836-847
-
-
Haran, M.1
Engstrom, J.R.2
Clancy, P.3
-
110
-
-
79952735910
-
-
10.1016/j.tsf.2011.01.278 0040-6090
-
Ren J, Cui C, Zhou G, Liu Y, Hu Y and Wang B 2011 Thin Solid Films 519 371621
-
(2011)
Thin Solid Films
, vol.519
, Issue.11
, pp. 3716-3721
-
-
Ren, J.1
Cui, C.2
Zhou, G.3
Liu, Y.4
Hu, Y.5
Wang, B.6
-
112
-
-
53549121686
-
-
10.1021/jp802979b 1932-7447 C
-
Han B et al 2008 J. Phys. Chem. C 112 9798802
-
(2008)
J. Phys. Chem.
, vol.112
, Issue.26
, pp. 9798-9802
-
-
Han, B.1
-
113
-
-
34547411984
-
Density function theory study of copper agglomeration on the WN(001) surface
-
DOI 10.1021/jp072907q
-
Wu J et al 2007 J. Phys. Chem. C 111 94036 (Pubitemid 47166884)
-
(2007)
Journal of Physical Chemistry C
, vol.111
, Issue.26
, pp. 9403-9406
-
-
Wu, J.1
Han, B.2
Zhou, C.3
Lei, X.4
Gaffney, T.R.5
Norman, J.A.T.6
Li, Z.7
Gordon, R.8
Cheng, H.9
-
115
-
-
79955648158
-
-
10.1021/la101207y 0743-7463
-
Elliott S D 2010 Langmuir 26 917982
-
(2010)
Langmuir
, vol.26
, Issue.12
, pp. 9179-9182
-
-
Elliott, S.D.1
-
116
-
-
21744444606
-
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
-
DOI 10.1063/1.1940727, 121301
-
Puurunen R L 2005 J. Appl. Phys. 97 121301 (Pubitemid 40940570)
-
(2005)
Journal of Applied Physics
, vol.97
, Issue.12
, pp. 1-52
-
-
Puurunen, R.L.1
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