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Volumn 359, Issue 1-3, 1996, Pages 213-226

CF3 radicals as growth precursors and halogen-assisted growth on diamond (100)2 × 1: An ab initio study

Author keywords

Ab initio quantum chemical methods and calculations; Atomic layer epitaxy; Chemical vapor deposition; Chemisorption; Clusters used as models of surfaces; Diamond; Fluorine; Growth mechanism; Halogenated hydrocarbon radicals; Hydrogen

Indexed keywords

ATOMS; BINDING ENERGY; CALCULATIONS; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; DECOMPOSITION; DIAMOND FILMS; FILM GROWTH; FREE RADICALS; MATHEMATICAL MODELS; SURFACE STRUCTURE;

EID: 0030195668     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00026-X     Document Type: Article
Times cited : (14)

References (104)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.