Importance of Steric Effects in Cluster Models of Silicon Surface Chemistry: ONIOM Studies of the Atomic Layer Deposition (ALD) of Al 2O 3 on H/Si(111)

Journal of Physical Chemistry A

Volumn 108, Issue 15, 2004, Pages 2982-2987

  Halls, Mathew D ^a   Raghavachari, Krishnan ^a  

^a INDIANA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); CLUSTER MODELS; COVALENT BONDS; INTERATOMIC DISTANCES;

ACTIVATION ENERGY; CHEMICAL BONDS; DIELECTRIC MATERIALS; ENTHALPY; MOLECULAR DYNAMICS; QUANTUM THEORY; SURFACE CHEMISTRY; SURFACE REACTIONS; THERMODYNAMICS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 2342571077     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp037014m     Document Type: Article

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