Adsorption reactions of dimethylaluminum isopropoxide and water on the H/Si(100)-2 × 1 surface: Initial reactions for atomic layer deposition of A12O3

Journal of Physical Chemistry B

Volumn 110, Issue 23, 2006, Pages 11277-11283

  Ghosh, Manik Kumer ^a   Choi, Cheol Ho ^a  

^a Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; DEPOSITION; METHANE; SUBSTITUTION REACTIONS; SURFACE PROPERTIES; THERMODYNAMIC PROPERTIES;

ATOMIC LAYER DEPOSITION; DIMETHYLALUMINUM ISOPROPOXIDE (DMAI); TRIMETHYLALUMINUM;

ALUMINUM COMPOUNDS;

EID: 33745699402     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp060342c     Document Type: Article

References (32)

1. Ritala, M.; Leskelä, M. In Handbook of Thin Film Materials; Nalwa, H. S., Ed.; Academic Press: San Diego, CA, 2001; Vol. 1, Chapter 2.
2. Ritala, M.; Kukli, K.; Rathu, A.; Raisanen, P. I.; Leskelä, M.; Sajavaara, T.; Leinonen, J. Science 2000, 288, 319.
3. Leskelä, M.; Ritala, M. Thin Solid Films 2002, 409, 138.
4. Heyman, A.; Musgrave, C. B. J. Phys. Chem. B 2004, 108, 5718-5725.
5. Muller, D. A.; Sorsch, T.; Moccio, S.; Baumann, F. H.; Evans-Lutterodt, K.; Timp, G. Nature 1999, 399, 758.
6. Packan, P. A. Science 1999, 285, 2079.
7. Wilk, G. D.; Wallace, R. M.; Anthony, J. M. J. Appl. Phys. 2001, 89, 5243.
8. Klein, T. M.; Niu, D.; Epling, W. S.; Li, W.; Maher, D. M.; Hobbs, C. C.; Hedgw, R. I.; Baumvol, I. J. R.; Parsons, G. N. Appl. Phys. Lett. 1999, 25, 4001.
9. Manchanda, L.; Morris, M. D.; Green, M. L.; van Dover: R. B.; Klemens, F.; Sorsch, T. W.; Silverman, P. J.; Wilk, G.; Busch, B.; Aravamudhan, S. Microelectron. Eng. 2001, 59, 351.
10. Copel, M.; Cartier, E. P.; Gusev, S.; Guha, S.; Bojarczuk, N.; Poppeller, M. Appl. Phys. Lett. 2001, 78, 2670.
11. Suntola, T. In Handbook of Crystal Growth; Hurle, D. T. J., Ed.; Elsevier Science: New York, 1994; Vol. 3, pp 605-663.
12. Puurunen, R. L. J. Appl. Phys. 2005, 97, 121301.
13. (a) Widjaja, Y.; Musgrave, C. B. Appl. Phys. Lett. 2002, 80, 3304.
14. (b) Heyman, A.; Musgrave, C. B. J. Phys. Chem. B 2004, 108, 5718.
15. Matsuwaki, T.; Nakajimia, T.; Yamashita, K. J. Phys. IV 2001, 11, 63.
16. (a) Halls, M. D.; Raghavachari, K. J. Chem. Phys. 2003, 118, 10221-10226.
17. (b) Halls, M. D.; Raghavachari, K.; Frank, M. M.; Chabal, Y. J. Phys. Rev. B 2003, 68, 161302.
18. (c) Halls, M. D.; Raghavachari, K. J. Phys. Chem. B 2004, 108, 4058.
19. (a) An, K.; Cho, W.; Sung, K.; Lee, S. S.; Kim, Y. Bull. Korean Chem. Soc. 2003, 24, 1659.
20. (b) Cho, W.; Sung, K.; An, K.; Lee, S. S.; Chung, T.; Kim, Y. J. Vac. Sci. Technol., A 2003, 21, 1366.
21. (a) Choi, C.H.; Gordon, M.S. J. Am. Chem. Soc. 1999, 121, 11311.
22. (b) Choi, C. H.; Gordon, M. S. The Chemistry of Organic Silicon Compounds; Rappoport, Z., Apeloig, Y., Eds.; John Wiley & Sons: New York, 2001; Vol. 3, Chapter 15, pp 821-852.
23. (c) Choi, C. H.; Gordon, M. S. Computational Materials Chemistry: Methods and Applications, Theoretical Studies of Silicon Surface Reactions with Main Group Absorbates; Curtiss, L. A., Gordon, M. S., Eds.; Kluwer Academic Publishers: Norwell, MA, 2004; Chapter 4, pp 125-190.
24. (a) Schmidt, M. W.; Balbridge, K. K.; Boatz, J. A.; Elbert, S. T.; Gordon, M. S.; Jensen, J. H.; Koseki, S.; Matsunaga, N.; Nguyen, K. A.; Su, S.; Windus, T. L.; Dupuis, M.; Montgomery, J. A., Jr. J. Comput. Chem. 1993, 14, 1347.
25. (b) Fletcher, G. D.; Schmidt, M. W.; Gordon, M. S. Adv. Chem. Phys. 1999, 110, 267.
26. Herhe, W. J.; Ditchfield, R.; Pople, J. A. J. Chem. Phys. 1972, 56, 2257.
27. (a) Gonzalez, C.; Schlegel, H. B. J Phys. Chem. 1990, 94, 5523.
28. (b) Gonzalez, C.; Schelegel, H. B. J. Chem. Phys. 1991, 95, 5853.
29. Shoemaker, J. R.; Burgruff, L. W.; Gordon, M. S. J Phys. Chem. A 1999, 103, 3245.
30. (a) Allinger, N. L.; Yuh, Y. H.; Lii, J. H. J. Am. Chem. Soc. 1989, 111, 8551.
31. (b) Lii, J. H.; Allinger, N. L. J. Am. Chem. Soc. 1989, 111, 8566.
32. (c) Lii, J. H.; Allinger, N. L. J. Am. Chem. Soc. 1989, 111, 8576.