Surface reaction mechanism of Y 2 O 3 atomic layer deposition on the hydroxylated Si(1 0 0)-2 × 1: A density functional theory study

Applied Surface Science

Volumn 255, Issue 16, 2009, Pages 7136-7141

  Ren, Jie ^a   Zhou, Guangfen ^a   Hu, Yongqi ^a   Zhang, David Wei ^b  

^a HEBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b ASIC and System   (China)

Author keywords

Atomic layer deposition; Density functional theory; Dielectrics; Yttria

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; CHEMICAL BONDS; CHEMISORPTION; DIELECTRIC MATERIALS; FREE ENERGY; GIBBS FREE ENERGY; HYDROXYLATION; SILICON COMPOUNDS; SURFACE REACTIONS; YTTRIUM OXIDE;

CYCLOPENTADIENYLS; DENSITY FUNCTIONAL THEORY STUDIES; GIBBS FREE ENERGY CALCULATIONS; HALF REACTIONS; METAL CENTERS; SILICON SURFACES; STERIC CONGESTION; SURFACE REACTION MECHANISM;

DENSITY FUNCTIONAL THEORY;

EID: 67349186931     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.03.044     Document Type: Article

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