Improving ALD growth rate via ligand basicity: Quantum chemical calculations on lanthanum precursors

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9076-9081

  Elliott, Simon D ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Atomic layer deposition; Density functional theory; High k dielectrics; Lanthanum oxide

Indexed keywords

DENSITY FUNCTIONAL THEORY; FILM GROWTH; LANTHANUM COMPOUNDS; LIGANDS; QUANTUM CHEMISTRY;

LANTHANUM OXIDE; QUANTUM CHEMICAL CALCULATION;

ATOMIC LAYER DEPOSITION;

ATOMIC LAYER DEPOSITION; DENSITY FUNCTIONAL THEORY; FILM GROWTH; LANTHANUM COMPOUNDS; LIGANDS; QUANTUM CHEMISTRY;

EID: 34547671039     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.116     Document Type: Article

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