Three-step mechanism of the water recombination reactions on SiO 2/Si surface in the first stage of ZrO2 atomic layer deposition

Computational Materials Science

Volumn 33, Issue 1-3, 2005, Pages 59-65

  Jeloaica, L ^a   Esteve A ^a   Dkhissi, A ^a   Esteve D ^a   Djafari Rouhani, M ^a,b  

^a LAAS CNRS   (France)

^b France   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMISORPTION; DEPOSITION; FIELD EFFECT TRANSISTORS; HYDROCHLORIC ACID; HYDROGEN BONDS; HYDROLYSIS; MICROELECTRONICS; REACTION KINETICS; SILICON; SURFACE REACTIONS; ZIRCONIA;

ANTI-COOPERATIVE INTERACTIONS; ATOMIC LAYER DEPOSITION (ALD); CHEMISOBED COMPLEXES; ENDOTHERMIC REACTIONS;

SILICA;

EID: 14644404380     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2004.12.060     Document Type: Conference Paper

References (14)

1. 2003 Edition of the International Roadmap for Semiconductors. Available from: http://public.itrs.net/Files/2003ITRS/Home2003.htm
2. M.I. Green, E.P. Gusev, and R. Degraeve J. Appl. Phys. 90 2001 2057
3. M.I. Green, M.Y. Ho, and B. Bush J. Appl. Phys. 92 2002 127168
4. R.M.C. de Almeida, and I.J.R. Baumvol Surf. Sci. Rep. 49 2003 1
5. Leskela Markku, and Ritala Mikko Thin Solid Films 409 2002 138 139
6. L. Jeloaica, A. Estève, M. Djafari Rouhani, and D. Estève Appl. Phys. Lett. 83 3 2003 542
7. A.D. Becke J. Chem. Phys. 98 1993 5648
8. C. Lee, W. Yang, and R.G. Parr Phys. Rev. B 37 1988 785
9. A. Bergner, M. Dolg, W. Kuechle, H. Stoll, and H. Preuss Mol. Phys. 80 1993 1431
10. A. Schaefer, H. Horn, and R. Ahlrichs J. Chem. Phys. 97 1992 2571
11. A. Schaefer, C. Huber, and R. Ahlrichs J. Chem. Phys. 100 1994 5829
12. M. Weldon, B.B. Stefanov, K. Raghavachari, and Y.I. Chabal Phys. Rev. Lett. 79 1997 2851
13. T. Helgaker Chem. Phys. Lett. 182 1991 503
14. A. Dkhissi, L. Adamowicz, and G. Maes J. Phys. Chem. A 104 2000 2112 2119