Density functional theory study of initial stage of ZrO2 atomic layer deposition on Ge/Si(100)-(2×1) surface

Thin Solid Films

Volumn 479, Issue 1-2, 2005, Pages 73-76

  Chen, Wei ^a   Zhang, David Wei ^a   Ren, Jie ^a   Lu, Hong Liang ^a   Zhang, Jian Yun ^a   Xu, Min ^a   Wang, Ji Tao ^a   Wang, Li Kong ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Ab initio calculation; Atomic layer deposition; Chemisorption; Dielectrics

Indexed keywords

CHEMISORPTION; COMPUTATIONAL METHODS; DEPOSITION; DIELECTRIC MATERIALS; GERMANIUM; HYDROXYLATION; PASSIVATION; PROBABILITY DENSITY FUNCTION; REACTION KINETICS; SILICON; SURFACE PROPERTIES;

AB INITIO CALCULATION; ATOMIC LAYER DEPOSITION; DEPOSITION PROCESS; PASSIVATED SURFACE;

ZIRCONIUM COMPOUNDS;

EID: 15444377451     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.141     Document Type: Article

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