Surface reaction mechanisms for atomic layer deposition of silicon nitride

Surface Science

Volumn 557, Issue 1-3, 2004, Pages 159-170

  Mui, Collin ^a,b   Widjaja, Yuniarto ^a,c   Kang, Jeung Ku ^a,d   Musgrave, Charles B ^a  

^a Stanford University   (United States)

^b NOVELLUS SYSTEMS INC   (United States)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

^d Korean Adv Inst of Sci/Eng   (South Korea)

Author keywords

Ammonia; Clusters; Density functional calculations; Insulating films; Silane; Silicon nitride; Surface chemical reaction

Indexed keywords

AMMONIA; CHEMICAL ACTIVATION; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DIFFUSION; MASKS; MOSFET DEVICES; OXIDATION; PROBABILITY DENSITY FUNCTION; REACTION KINETICS; SILANES; SILICON NITRIDE;

CLUSTERS; DENSITY FUNCTIONAL CALCULATIONS; INSULATING FILMS; SURFACE CHEMICAL REACTIONS;

SURFACE REACTIONS;

EID: 2342648106     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.03.029     Document Type: Article

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