Area-selective atomic layer deposition of lead sulfide: Nanoscale patterning and DFT simulations

Langmuir

Volumn 26, Issue 9, 2010, Pages 6845-6852

  Lee, Wonyoung ^a   Dasgupta, Neil P ^a   Trejo, Orlando ^b   Lee, Jung Rok ^a   Hwang, Jaeeun ^a   Usui, Takane ^a   Prinz, Fritz B ^a,b  

^a STANFORD UNIVERSITY   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AFM LITHOGRAPHY; CONVENTIONAL PHOTOLITHOGRAPHY; DIPPING TIME; FABRICATION PROCESS; HIGH SELECTIVITY; LEAD SULFIDE; NANO SCALE; NANOFABRICATION; NANOSCALE PATTERNING; NEW OPPORTUNITIES; OCTADECYLTRICHLOROSILANE; OXIDE PATTERNS; PATTERNED SILICON; REACTION MECHANISM; SAMS;

AUGER ELECTRON SPECTROSCOPY; DENSITY FUNCTIONAL THEORY; DEPOSITION; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLED MONOLAYERS;

SURFACE REACTIONS;

EID: 77951683045     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la904122e     Document Type: Article

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