Atomic layer deposition of Al2O3 on H-passivated Si. I. Initial surface reaction pathways with H/Si(100)-2×1

Journal of Chemical Physics

Volumn 118, Issue 22, 2003, Pages 10221-10226

  Halls, Mathew D ^a   Raghavachari, Krishnan ^a  

^a INDIANA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM COMPOUNDS; CHEMICAL REACTIONS; DEPOSITION; DIELECTRIC MATERIALS; DIMERS; HYDROGEN; HYDROXYLATION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON; SURFACES; WATER;

ATOMIC LAYER DEPOSITION; INITIAL SURFACE REACTION PATHWAYS; TRIMETHYLALUMINUM;

ALUMINA;

EID: 0038128205     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1571513     Document Type: Article

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