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Volumn 133, Issue 15, 2010, Pages

Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition

(6) Clemens, Jonathon B a Chagarov, Evgueni A a Holland, Martin b Droopad, Ravi c Shen, Jian a Kummel, Andrew C a

a UNIVERSITY OF CALIFORNIA (United States)

b UNIVERSITY OF GLASGOW (United Kingdom)

c Texas State University San Marcos (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC IMAGING; COMPOUND SEMICONDUCTORS; DENSITY FUNCTIONAL THEORY SIMULATIONS; GATE OXIDE; GROUP III; INAS; NUCLEATION DENSITIES; ORDERED OVERLAYER; SUBNANOMETERS; SURFACE FERMI-LEVEL PINNING; TRIMETHYL ALUMINUMS;

ATOMIC LAYER DEPOSITION; INDIUM ARSENIDE; MONOLAYERS; NUCLEATION; PASSIVATION; SEMICONDUCTING INDIUM;

DENSITY FUNCTIONAL THEORY;

EID: 78049314956 PISSN: 00219606 EISSN: None Source Type: Journal
DOI: 10.1063/1.3487737 Document Type: Article

Times cited : (32)

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