Interaction of TEMAHf precursor with OH-terminated Si (001) surface: A first principles study

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 5, 2011, Pages 4324-4327

  Kim, Dae Hyun ^a   Kim, Dae Hee ^a   Seo, Hwa Il ^a   Kim, Yeong Cheo ^a  

^a Korea University of Technology and Education   (South Korea)

Author keywords

A first principles study; ALD; HfO 2; TEMAHf

Indexed keywords

ALD; ETHYLMETHYLAMINE; FIRST-PRINCIPLES STUDY; HFO 2; INITIAL STAGES; REACTION MECHANISM; REACTION SITES; SI SURFACES; SI(001) SURFACES; TEMAHF;

ATOMIC LAYER DEPOSITION; DIMERS; HAFNIUM; HAFNIUM OXIDES; SILICON;

SURFACE REACTIONS;

EID: 84863011196     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.3623     Document Type: Conference Paper

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