Modelling of ZrO2 deposition from ZrCl4 and H2O on the Si(1 0 0) surface: Initial reactions and surface structures

Computational Materials Science

Volumn 24, Issue 1-2, 2002, Pages 278-283

  Brodskii, V V ^a   Rykova, E A ^a   Bagatur'yants, A A ^a   Korkin, A A ^b  

^a Kinetic Technologies Ltd   (Russian Federation)

^b MOTOROLA INC   (United States)

Author keywords

ALD modelling; Film growth; First principle calculations; Zirconia

Indexed keywords

AMORPHOUS FILMS; CHEMISORPTION; COMPUTER SIMULATION; DEPOSITION; FILM GROWTH; HYDROXYLATION; OXIDATION; PROBABILITY DENSITY FUNCTION; SILICON; SURFACE STRUCTURE;

ATOMIC LAYER DEPOSITIONS (ALD);

ZIRCONIA;

EID: 0036577045     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0256(02)00192-1     Document Type: Conference Paper

References (20)