A theoretical study on initial growth mechanism of ZrO2 film using cyclopentadienyl-type precursor

Thin Solid Films

Volumn 519, Issue 11, 2011, Pages 3716-3721

  Ren, Jie ^a   Cui, Chengxing ^b   Zhou, Guangfen ^a   Liu, Yanchun ^a   Hu, Yongqi ^a   Wang, Baozhu ^a  

^a HEBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HENAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Atomic layer deposition; Density functional theory; Dielectrics; Zirconia

Indexed keywords

ACTIVATION BARRIERS; CYCLOPENTADIENYLS; DENSITY FUNCTIONALS; DFT CALCULATION; DIELECTRICS; ELIMINATION REACTION; GROWTH MECHANISMS; GROWTH REACTIONS; METAL PRECURSOR; REACTION PATHWAYS; SILICON SURFACES; THEORETICAL STUDY;

ACTIVATION ANALYSIS; ATOMIC LAYER DEPOSITION; ATOMS; CHEMICAL REACTIONS; LIGANDS; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

DENSITY FUNCTIONAL THEORY;

EID: 79952735910     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.278     Document Type: Article

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