Influence of alkalinity and steric hindrance of lewis-base catalysts on atomic layer deposition of SiO2

Journal of Physical Chemistry C

Volumn 115, Issue 47, 2011, Pages 23363-23373

  Chen, Shuang ^a   Fang, Guoyong ^a   Qian, Xu ^a   Li, Aidong ^a   Ma, Jing ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALD GROWTH; DENSITY FUNCTIONAL THEORY CALCULATIONS; HALF REACTIONS; HYDROGEN BONDING INTERACTIONS; LEWIS BASIS; LOW TEMPERATURE GROWTH; METAL OXIDES; RATE-LIMITING STEPS; RATIONAL DESIGN; REACTION PATHWAYS; REACTION SUBSTRATES; STERIC HINDRANCES; SURFACE MODELS;

ADSORPTION; ATOMIC LAYER DEPOSITION; CATALYSIS; CATALYST ACTIVITY; DENSITY FUNCTIONAL THEORY; DESORPTION; HYDROGEN; HYDROGEN BONDS; PH; REACTION INTERMEDIATES; SILICON COMPOUNDS;

ACTIVATION ENERGY;

EID: 82155192935     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp2048663     Document Type: Article

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