Atomic layer deposition and chemical vapor deposition precursor selection method application to strontium and barium precursors

Journal of Physical Chemistry A

Volumn 111, Issue 33, 2007, Pages 8147-8151

  Holme, Timothy P ^a   Prinz, Fritz B ^a  

^a Stanford University

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; BARIUM; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CONTAMINATION; DENSITY FUNCTIONAL THEORY; GROWTH RATE;

BARIUM PRECURSORS; OXYGEN SOURCES; SOURCE TEMPERATURE;

STRONTIUM;

EID: 34548583680     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp062568l     Document Type: Article

References (21)

1. Ezhilvalavan, S.; Tseng, T. Y. Mater. Chem. Phys. 2000, 65, 227-248.
2. Jones, A. C.; Chalker, P. R. J. Phys. D 2003, 36, R80-95.
3. Shen, Z. X.; Dessau, D. S. Phys. Rep. 1995, 253, 1-162.
4. Heikkinen, H.; Johansson, L. S.; Nykanen, E.; Niinisto, L. Appl. Surf. Sci. 1998, 133, 205-12.
5. Kreuer, K. D. Annu. Rev. Mater. Res. 2003, 33, 333-359.
6. Mogensen, M.; Skaarup, S. Solid State Ion. Diffus. React. 1996, 86-88, 1151-60.
7. Kosola, A.; Putkonen, M.; Johansson, L.; Niinisto, L. Appl. Surf. Sci. 2003, 211, 102-12.
8. Vehkamäki, M.; Hatanpää, T.; Hanninen, T.; Ritala, M.; Leskelä, M. Electrochem. Solid-State Lett. 1999, 2, 504-6.
9. Putkonen, M. Ph.D. thesis, Helsinki University of Technology, Espoo, Finland, 2002.
10. Hatanpää, T.; Vehkamäki, M.; Mutikainen, I.; Kansikas, J.; Ritala, M.; Leskelä, M. Dalton Trans. 2004, 8, 1181-8.
11. Hinds, B. J.; McNeely, R. J.; Studebaker, D. B.; Marks, T. J.; Hogan, T. P.; Schindler, J. L.; Kannewurf, C. R.; Zhang, X. F.; Miller, D. J. J. Mater. Res. 1997, 12, 1214-36.
12. Momose, S.; Nakamura, T.; Tachibana, K. Jpn. J. Appl. Phys. Suppl. 2000, 39, 5384-8.
13. Fahlman, B. D.; Barron, A. R. Adv. Mater. Opt. Electron. 2000, 10, 223-232.
14. Wadt, W. R.; Hay, P. J. J. Chem. Phys. 1985, 82, 284-298.
15. Becke, A. D. Phys. Rev. A 1988, 38, 3098-3100.
16. Lee, C. T.; Yang, W. T.; Parr, R. G. Phys. Rev. B 1988, 37, 785-789.
17. Han, J. H.; Gao, G.; Widjaja, Y.; Garfunkel, E.; Musgrave, C. B. Surf. Sci. 2004, 550, 199-212.
18. Nakamura, T.; Tai, R.; Nishimura, T.; Tachibana, K. J. Electrochem. Soc. 2005, 152, C584-7.
19. Nakamura, T.; Momose, S.; Tachibana, K. Jpn. J. Appl. Phys. 2001, 40, 6619-22.
20. Aarik, J.; Aidla, A.; Jaek, A.; Leskela, M.; Niinisto, L. J. Mater. Chem. 1994, 4, 1239-1244.
21. Bedoya, C.; Condorelli, G. G.; Di Mauro, A.; Anastasi, G.; Fragala, I. L.; Lisoni, J. G.; Wouters, D. Mater. Sci. Eng. B 2005, 118, 264-9.