First-principles analyses and predictions on the reactivity of barrier layers of Ta and TaN toward organometallic precursors for deposition of copper films

Langmuir

Volumn 21, Issue 16, 2005, Pages 7608-7614

  Machado, Eduardo ^a   Kaczmarski, Marcin ^a   Ordejón, Pablo ^a   Garg, Diwakar ^b   Norman, John ^b   Cheng, Hansong ^b  

^a INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^b AIR PRODUCTS AND CHEMICALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER THIN FILMS; PHYSICAL VAPRO DEPOSITION (PVD); PRECURSORS; VOLATILE PRODUCTS;

COPPER; ELECTRODEPOSITION; HYDROGEN BONDS; ORGANOMETALLICS; TANTALUM COMPOUNDS; THIN FILMS;

TANTALUM;

EID: 23844472694     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la050164z     Document Type: Article

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