Initial surface reactions in atomic layer deposition of Al 2O3 on the hydroxylated GaAs(001)-4 × 2 surface

Journal of Physics Condensed Matter

Volumn 17, Issue 48, 2005, Pages 7517-7522

  Lu, Hong Liang ^a   Chen, Wei ^a   Ding, Shi Jin ^a   Xu, Min ^a   Zhang, David Wei ^a   Wang, Li Kang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; HYDROXYLATION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE REACTIONS; THERMODYNAMICS;

ACTIVATION BARRIERS; ATOMIC LAYER DEPOSITION (ALD); HALF-REACTIONS; REACTANTS;

ALUMINA;

EID: 27844482427     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/48/005     Document Type: Article

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