Density functional theory study of initial stage of HfO2 atomic layer deposition on hydroxylated SiO2 surface

Journal of Molecular Structure: THEOCHEM

Volumn 803, Issue 1-3, 2007, Pages 23-28

  Ren, Jie ^a   Zhang, Ya Tong ^a   Zhang, David Wei ^b  

^a HEBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b ASIC and System   (China)

Author keywords

Atomic layer deposition; Density functional theory; Dielectrics; Hafnium oxide

Indexed keywords

EID: 33846626074     PISSN: 01661280     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.theochem.2006.09.025     Document Type: Article

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