Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications

Semiconductor Science and Technology

Volumn 27, Issue 7, 2012, Pages

  Wiemer, C ^a   Lamagna, L ^a   Fanciulli, M ^a,b  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONFORMAL FILMS; DEPOSITION PROCESS; DOPANT ATOMS; LANTHANIDE OXIDE; MICRO-ELECTRONIC DEVICES; MICROELECTRONIC APPLICATIONS; SCIENTIFIC ISSUES; TERNARY OXIDES;

ELECTRIC PROPERTIES; HAFNIUM OXIDES; LANTHANUM; LANTHANUM OXIDES; MICROELECTRONICS;

ATOMIC LAYER DEPOSITION;

EID: 84862727950     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/7/074013     Document Type: Article

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