-
1
-
-
0034760081
-
Rare earth oxide films: Their preparation and characterization
-
153
-
T. Wiktorczyk: Rare earth oxide films: their preparation and characterization, Optica Applicata 31, 5 (2001) 153
-
(2001)
Optica Applicata
, vol.31
, pp. 5
-
-
Wiktorczyk, T.1
-
2
-
-
0035872897
-
High-k gate dielectrics: Current status and materials properties considerations
-
153, 155
-
G. D. Wilk, R. M. Wallace, J. M. Anthony: High-k gate dielectrics: current status and materials properties considerations, J. Appl. Phys. 89, 5243 (2001) 153, 155
-
(2001)
J. Appl. Phys.
, vol.89
, pp. 5243
-
-
Wilk, G.D.1
Wallace, R.M.2
Anthony, J.M.3
-
3
-
-
0030291621
-
Thermodynamic stability of binary oxides in contact with silicon
-
153
-
K. J. Hubbard, D. G. Schlom: Thermodynamic stability of binary oxides in contact with silicon, J. Mater. Res. 11, 2757 (1996) 153
-
(1996)
J. Mater. Res.
, vol.11
, pp. 2757
-
-
Hubbard, K.J.1
Schlom, D.G.2
-
4
-
-
33750801381
-
3 high-k thin films on Si(100) fabricated by e-beam deposition method
-
153
-
3 high-k thin films on Si(100) fabricated by e-beam deposition method, in ISTC (2002) pp. 251-261 153
-
(2002)
ISTC
, pp. 251-261
-
-
Ohmi, S.1
Takeda, M.2
Ishiwara, H.3
Iwai, H.4
-
5
-
-
42749103016
-
Structure and stability of rare-earth and transitionmetal oxides
-
154
-
L. Marsella, V. Fiorentini: Structure and stability of rare-earth and transitionmetal oxides, Phys. Rev. B 69, 172103 (2004) 154
-
(2004)
Phys. Rev. B
, vol.69
, pp. 172103
-
-
Marsella, L.1
Fiorentini, V.2
-
6
-
-
2342632548
-
Thermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal-oxide-semiconductors
-
154
-
S. Stemmer: Thermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal-oxide- semiconductors, J. Vac. Sci. Technol. B 22, 791 (2004) 154
-
(2004)
J. Vac. Sci. Technol. B
, vol.22
, pp. 791
-
-
Stemmer, S.1
-
7
-
-
2442545521
-
2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN
-
154
-
2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN, Mat. Res. Soc. T86, 341 (2004) 154
-
(2004)
Mat. Res. Soc.
, vol.T86
, pp. 341
-
-
Fanciulli, M.1
Spiga, S.2
Scarel, G.3
Tallarida, G.4
Wiemer, C.5
Seguini, G.6
-
8
-
-
0034739021
-
Alternative dielectrics to silicon dioxide for memory and logic devices
-
155
-
A. Kingon, J. P. Maria, S. K. Streiffer: Alternative dielectrics to silicon dioxide for memory and logic devices, Nature 406, 1032 (2000) 155
-
(2000)
Nature
, vol.406
, pp. 1032
-
-
Kingon, A.1
Maria, J.P.2
Streiffer, S.K.3
-
9
-
-
0035796727
-
2 layers on Si(001)
-
155, 157, 159, 160, 172
-
2 layers on Si(001), Appl. Phys. Lett. 79, 102 (2001) 155, 157, 159, 160, 172
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 102
-
-
Stemmer, S.1
Maria, J.P.2
Kingon, A.I.3
-
10
-
-
4944259427
-
Film properties of ALD Hf- And La-gate dielectrics grown on Si with various pre-deposition treatments
-
155
-
D. H. Tryioso, R. I. Hegde, J. Grant, P. Fejes, R. Liu, D. Roan, M. Ramon, D. Werho, R. Rai, L. B. La, J. Baker, C. Garza, T. Guenther, B. E. White, Jr., P. J. Tobin: Film properties of ALD Hf- and La-gate dielectrics grown on Si with various pre-deposition treatments, J. Vac. Sci. Technol. B 22, 2121 (2004) 155
-
(2004)
J. Vac. Sci. Technol. B
, vol.22
, pp. 2121
-
-
Tryioso, D.H.1
Hegde, R.I.2
Grant, J.3
Fejes, P.4
Liu, R.5
Roan, D.6
Ramon, M.7
Werho, D.8
Rai, R.9
La, L.B.10
Baker, J.11
Garza, C.12
Guenther, T.13
White Jr., B.E.14
Tobin, P.J.15
-
11
-
-
0034825393
-
3 films deposited directly on Si (001)
-
155, 157, 158
-
3 films deposited directly on Si (001), Appl. Surf. Sci. 173, 318 (2001) 155, 157, 158
-
(2001)
Appl. Surf. Sci.
, vol.173
, pp. 318
-
-
Gupta, J.A.1
Landheer, D.2
Sproule, G.I.3
McCaffrey, J.P.4
Graham, M.J.5
Yang, K.-C.6
Lu, Z.-H.7
Lennard, W.N.8
-
12
-
-
10644251851
-
2 high-k gate stacks on Si
-
155
-
2 high-k gate stacks on Si, Appl. Phys. A 80, 253 (2004) 155
-
(2004)
Appl. Phys. A
, vol.80
, pp. 253
-
-
Mereu, B.1
Dimoulas, A.2
Vellianitis, G.3
Apostolopoulos, G.4
Scholz, R.5
Alexe, M.6
-
13
-
-
0002719933
-
Gate dielectric metrology using advanced TEM measurements
-
155, 156
-
D. A. Muller: Gate dielectric metrology using advanced TEM measurements, AIP-Conference-Proceedings 550, 500 (2001) 155, 156
-
(2001)
AIP-Conference-proceedings
, vol.550
, pp. 500
-
-
Muller, D.A.1
-
14
-
-
0742323368
-
Thin dielectric film thickness determination by advanced transmission electron microscopy
-
155
-
A. C. Diebold, B. Foran, C. Kisielowsky, D. A. Muller, S. J. Pennycook, E. Principe, S. Stemmer: Thin dielectric film thickness determination by advanced transmission electron microscopy, Microsc. Microanal. 9, 493 (2003) 155
-
(2003)
Microsc. Microanal.
, vol.9
, pp. 493
-
-
Diebold, A.C.1
Foran, B.2
Kisielowsky, C.3
Muller, D.A.4
Pennycook, S.J.5
Principe, E.6
Stemmer, S.7
-
15
-
-
14844283779
-
2 gate dielectric metrology using transmission electron microscopy
-
156, 161
-
2 gate dielectric metrology using transmission electron microscopy, in Proc. 11th Int. Symp. on the Physical and Failure Analysis if Integrated Circuits, IPFA (2004) p. 135 156, 161
-
(2004)
Proc. 11th Int. Symp. on the Physical and Failure Analysis if Integrated Circuits, IPFA
, pp. 135
-
-
Du, A.Y.1
Tung, C.H.2
Freitag, B.H.3
Zhang, W.Y.4
Lim, S.5
Ang, E.H.6
Ng, D.7
-
16
-
-
2442678657
-
Simultaneous STEM imaging and electron energy-loss spectroscopy with atomic-column sensitivity
-
156
-
P. E. Batson: Simultaneous STEM imaging and electron energy-loss spectroscopy with atomic-column sensitivity, Lett. Nature 366, 727 (1993) 156
-
(1993)
Lett. Nature
, vol.366
, pp. 727
-
-
Batson, P.E.1
-
17
-
-
0035309756
-
3 for Si
-
156, 158, 161
-
3 for Si, J. Appl. Phys. 89, 3920 (2002) 156, 158, 161
-
(2002)
J. Appl. Phys.
, vol.89
, pp. 3920
-
-
Kwo, J.1
Hong, M.2
Kortan, A.R.3
-
18
-
-
29044435964
-
Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition
-
157, 158
-
D. H. Tryioso, R. I. Hegde, J. Grant, J. K. Schaeffer, D. Roan, B. E. White, Jr., P. J. Tobin: Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition, J. Vac. Sci. Technol. B 23, 288 (2005) 157, 158
-
(2005)
J. Vac. Sci. Technol. B
, vol.23
, pp. 288
-
-
Tryioso, D.H.1
Hegde, R.I.2
Grant, J.3
Schaeffer, J.K.4
Roan, D.5
White Jr., B.E.6
Tobin, P.J.7
-
19
-
-
84907698305
-
Electrical properties of MOCVD praseodymium oxide based MOS structures
-
157, 159, 172
-
R. Lo-Nigro, R. Toro, G. Malandrino, V. Raineri, I. L. Fragalà: Electrical properties of MOCVD praseodymium oxide based MOS structures, in Proc. of the 93rd European Solid State Device Research (ESSDERC) (2003) p. 375 157, 159, 172
-
(2003)
Proc. of the 93rd European Solid State Device Research (ESSDERC)
, pp. 375
-
-
Lo-Nigro, R.1
Toro, R.2
Malandrino, G.3
Raineri, V.4
Fragalà, I.L.5
-
20
-
-
0035915288
-
Epitaxial growth of praseodymium oxide on silicon
-
157
-
H. J. Osten, J. P. Liu, E. Bugiel: Epitaxial growth of praseodymium oxide on silicon, Mat. Sci. Eng. B 87, 297 (2001) 157
-
(2001)
Mat. Sci. Eng. B
, vol.87
, pp. 297
-
-
Osten, H.J.1
Liu, J.P.2
Bugiel, E.3
-
21
-
-
13644277084
-
4 interfacial layer on Si(111)
-
157, 158
-
4 interfacial layer on Si(111), Jap. J. Appl. Phys. 43, 7926 (2004) 157, 158
-
(2004)
Jap. J. Appl. Phys.
, vol.43
, pp. 7926
-
-
Sim, H.1
Samantaray, C.B.2
Lee, T.3
Yeom, H.4
Hwang, H.5
-
22
-
-
0037110956
-
Structural comparison of gadolinium and lanthanum silicate films on Si(100) by HRTEM, EELS and SAED
-
157, 159
-
X. Wu, D. Landheer, T. Quance, M. J. Graham, G. A. Bottom Structural comparison of gadolinium and lanthanum silicate films on Si(100) by HRTEM, EELS and SAED, Appl. Surf. Sci. 200, 15 (2002) 157, 159
-
(2002)
Appl. Surf. Sci.
, vol.200
, pp. 15
-
-
Wu, X.1
Landheer, D.2
Quance, T.3
Graham, M.J.4
Bottom, G.A.5
-
23
-
-
0042267252
-
y films as alternative gate dielectric materials
-
157
-
y films as alternative gate dielectric materials, J. Appl. Phys. 94, 1229 (2003) 157
-
(2003)
J. Appl. Phys.
, vol.94
, pp. 1229
-
-
Lu, X.B.1
Liu, Z.G.2
Wang, Y.P.3
Yang, Y.4
Wang, X.P.5
Zhou, H.W.6
Nguyen, B.Y.7
-
24
-
-
0242415147
-
3 gate dielectrics on si grown by metalorganic chemical vapor deposition
-
157, 158
-
3 gate dielectrics on si grown by metalorganic chemical vapor deposition, Appl. Phys. Lett. 83, 3540 (2003) 157, 158
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 3540
-
-
Li, A.1
Shao, Q.2
Ling, H.3
Cheng, J.B.4
Wu, D.5
Liu, Z.G.6
Ming, N.B.7
Wang, G.8
Zhou, H.W.9
Nguyen, B.Y.10
-
25
-
-
0035952884
-
Interfacial reactions between thin rare-earth-metal oxide films and Si substrates
-
158, 172
-
H. Ono, T. Katsumata: Interfacial reactions between thin rare-earth-metal oxide films and Si substrates, Appl. Phys. Lett. 78, 1832 (2001) 158, 172
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 1832
-
-
Ono, H.1
Katsumata, T.2
-
26
-
-
3042541331
-
Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon
-
158
-
L. F. Edge, D. G. Schlom, R. T. Brewer, Y. J. Chabal, J. R. Williams, S. A. Chambers, C. Hinkle, G. Lucovsky, Y. Yang, S. Stemmer, M. Copel, B. Holländer, J. Schubert: Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon, Appl. Phys. Lett. 84, 4629 (2004) 158
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 4629
-
-
Edge, L.F.1
Schlom, D.G.2
Brewer, R.T.3
Chabal, Y.J.4
Williams, J.R.5
Chambers, S.A.6
Hinkle, C.7
Lucovsky, G.8
Yang, Y.9
Stemmer, S.10
Copel, M.11
Holländer, B.12
Schubert, J.13
-
27
-
-
0043210497
-
MOCVD of high-dielectric-constant lanthanum oxide thin films
-
158
-
H. Yamada, T. Shimizu, A. Kurokawa, K. Ichii, E. Suzuki: MOCVD of high-dielectric-constant lanthanum oxide thin films, J. Electrochem. Soc. 150, G429 (2003) 158
-
(2003)
J. Electrochem. Soc.
, vol.150
-
-
Yamada, H.1
Shimizu, T.2
Kurokawa, A.3
Ichii, K.4
Suzuki, E.5
-
28
-
-
0035477585
-
High temperature stability in lanthanum and zirconia-based gate dielectrics
-
158
-
J. P. Maria, D. Wicaksana, A. I. Kingon, et al.: High temperature stability in lanthanum and zirconia-based gate dielectrics, J. Appl. Phys. 90, 3476 (2001) 158
-
(2001)
J. Appl. Phys.
, vol.90
, pp. 3476
-
-
Maria, J.P.1
Wicaksana, D.2
Kingon, A.I.3
-
29
-
-
0000552940
-
Atomic beam deposition of lanthanum- And yttrium-based oxide thin films for gate dielectrics
-
158
-
S. Guha, E. Cartier, M. A. Gribelyuk, N. A. Gribelyuk, N. A. Bojarczuk, M. C. Copel: Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics, Appl. Phys. Lett. 77, 2710 (2000) 158
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 2710
-
-
Guha, S.1
Cartier, E.2
Gribelyuk, M.A.3
Gribelyuk, N.A.4
Bojarczuk, N.A.5
Copel, M.C.6
-
30
-
-
33845456830
-
3 films deposited directly on Si (001)
-
159, 160, 167, 172
-
3 films deposited directly on Si (001), J. Appl. Phys. 91, 2921 (2002) 159, 160, 167, 172
-
(2002)
J. Appl. Phys.
, vol.91
, pp. 2921
-
-
Botton, G.A.1
Gupta, J.A.2
Landheer, D.3
McCaffrey, J.P.4
Sproule, G.I.5
Graham, M.J.6
-
31
-
-
0033600230
-
The electronic structure at the atomic scale of ultrathin gate dielectrics
-
159
-
D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, G. Timp: The electronic structure at the atomic scale of ultrathin gate dielectrics, Nature 399, 758 (1999) 159
-
(1999)
Nature
, vol.399
, pp. 758
-
-
Muller, D.A.1
Sorsch, T.2
Moccio, S.3
Baumann, F.H.4
Evans-Lutterodt, K.5
Timp, G.6
-
34
-
-
0033033816
-
Analyses of composition and chemical shift of silicon oxynitride film using energy-filtering transmission electron microscope based spatially resolved electron energy loss spectroscopy
-
160
-
K. Kimoto, K. Kobayashi, T. Aoyama, Y. Mitsui: Analyses of composition and chemical shift of silicon oxynitride film using energy-filtering transmission electron microscope based spatially resolved electron energy loss spectroscopy, Micron 30, 121 (1999) 160
-
(1999)
Micron
, vol.30
, pp. 121
-
-
Kimoto, K.1
Kobayashi, K.2
Aoyama, T.3
Mitsui, Y.4
-
36
-
-
0037488174
-
Electron energy-loss spectroscopic profiling of thin film structures: 0.39nm line resolution and 0.04eV precision measurement of near-edge structure shifts at interfaces
-
160
-
T. Walther: Electron energy-loss spectroscopic profiling of thin film structures: 0.39nm line resolution and 0.04eV precision measurement of near-edge structure shifts at interfaces, Ultramicroscopy 96, 401 (2003) 160
-
(2003)
Ultramicroscopy
, vol.96
, pp. 401
-
-
Walther, T.1
-
38
-
-
5044235624
-
Spectrum imaging of high-k dielectric stacks
-
161, 162
-
M. MacKenzie, A. J. Craven, D. W. McComb, D. A. Hamilton, S. McFadzean: Spectrum imaging of high-k dielectric stacks, Inst. Phys. Conf. Ser. 199, 299 (2003) 161, 162
-
(2003)
Inst. Phys. Conf. Ser.
, vol.199
, pp. 299
-
-
MacKenzie, M.1
Craven, A.J.2
McComb, D.W.3
Hamilton, D.A.4
McFadzean, S.5
-
39
-
-
4043099571
-
3
-
162, 164, 165, 168, 170, 172
-
3, Appl. Phys. Lett. 85, 630 (2004) 162, 164, 165, 168, 170, 172
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 630
-
-
Scarel, G.1
Bonera, E.2
Wiemer, C.3
Tallarida, G.4
Spiga, S.5
Fanciulli, M.6
Fedushkin, I.L.7
Schumann, H.8
Lebedinskii, Y.9
Zenkevich, A.10
-
40
-
-
0022954389
-
Local bonding and electronic structure obtained from electron energy loss scattering
-
164, 167
-
P. Batson, K. L. Kavanagh, C. Y. Wong, J. M. Woodall: Local bonding and electronic structure obtained from electron energy loss scattering, Ultramicroscopy 22, 89 (1987) 164, 167
-
(1987)
Ultramicroscopy
, vol.22
, pp. 89
-
-
Batson, P.1
Kavanagh, K.L.2
Wong, C.Y.3
Woodall, J.M.4
-
41
-
-
0013088568
-
Analysis of valence shell electronic excitations in silicon and its refractory compounds using electron energy loss microspectroscopy
-
164
-
W. M. Skiff, R. W. Carpenter, S. H. Lin: Analysis of valence shell electronic excitations in silicon and its refractory compounds using electron energy loss microspectroscopy, J. Appl. Phys 64, 6328 (1988) 164
-
(1988)
J. Appl. Phys
, vol.64
, pp. 6328
-
-
Skiff, W.M.1
Carpenter, R.W.2
Lin, S.H.3
-
42
-
-
0003175319
-
Si L core edge fine structure in an oxidation series of silicon compounds:a comparison of microelectron energy loss spectra with theory
-
164
-
W. M. Skiff, R. W. Carpenter, S. H. Lin: Si L core edge fine structure in an oxidation series of silicon compounds:a comparison of microelectron energy loss spectra with theory, J. Appl. Phys. 58, 3463 (1985) 164
-
(1985)
J. Appl. Phys.
, vol.58
, pp. 3463
-
-
Skiff, W.M.1
Carpenter, R.W.2
Lin, S.H.3
-
43
-
-
0042953543
-
Analysis of the electron excitation spectra in heavy rare earth metals, hydrides and oxides
-
164
-
C. Colliex, M. Gasgnier, P. Trebbia: Analysis of the electron excitation spectra in heavy rare earth metals, hydrides and oxides, Le journal de Physique 37, 397 (1976) 164
-
(1976)
Le Journal de Physique
, vol.37
, pp. 397
-
-
Colliex, C.1
Gasgnier, M.2
Trebbia, P.3
-
44
-
-
0021370255
-
Fine structure analysis in EELS from rare earth sesquioxide thin films, Journal de Physique, Colloque C2
-
164, 167
-
L. M. Brown, C. Colliex, M. Gasgnier: Fine structure analysis in EELS from rare earth sesquioxide thin films, Journal de Physique, Colloque C2, Supp. au n. 2 45, 433 (1984) 164, 167
-
(1984)
Supp. Au N. 2
, vol.45
, pp. 433
-
-
Brown, L.M.1
Colliex, C.2
Gasgnier, M.3
-
45
-
-
0038502000
-
Study of the dielectric properties near the band gap by VEELS: Gap measurements in bulk materials
-
166
-
S. Schamm, G. Zanchi: Study of the dielectric properties near the band gap by VEELS: gap measurements in bulk materials, Ultamicroscop 96, 559 (2003) 166
-
(2003)
Ultamicroscop
, vol.96
, pp. 559
-
-
Schamm, S.1
Zanchi, G.2
-
47
-
-
0035335577
-
Refractive index and optical dispersion of rare earth oxides using a small-prism technique
-
166
-
O. Medenbach, D. Dettmar, R. D. Shannon, R. X. Fischer, W. M. Yen: Refractive index and optical dispersion of rare earth oxides using a small-prism technique, J. Opt. A: Pure Appl. Opt 3, 174 (2001) 166
-
(2001)
J. Opt. A: Pure Appl. Opt
, vol.3
, pp. 174
-
-
Medenbach, O.1
Dettmar, D.2
Shannon, R.D.3
Fischer, R.X.4
Yen, W.M.5
-
48
-
-
0034760082
-
Optical properties of electron beam deposited lutetium oxide thin films
-
166
-
T. Wiktorczyk: Optical properties of electron beam deposited lutetium oxide thin films, Optica Applicata XXXI (1), 83 (2001) 166
-
(2001)
Optica Applicata
, vol.31
, Issue.1
, pp. 83
-
-
Wiktorczyk, T.1
-
49
-
-
0030231713
-
3 (X = O, S, Se) in the lanthanide series
-
166
-
3 (X = O, S, Se) in the lanthanide series, J. Alloys and Compounds 242, 41 (1996) 166
-
(1996)
J. Alloys and Compounds
, vol.242
, pp. 41
-
-
Prokofiev, A.V.1
Shelykh, A.I.2
Melekh, B.T.3
-
50
-
-
0037670121
-
3 /Si interfacial transition layer
-
166
-
3 /Si interfacial transition layer, Appl. Surf. Sci. T6, 234 (2003) 166
-
(2003)
Appl. Surf. Sci.
, vol.T6
, pp. 234
-
-
Nohira, H.1
Shiraishi, T.2
Nakamura, T.3
Takahashi, K.4
Takeda, M.5
Ohmi, S.6
Iwai, H.7
Hattori, T.8
-
52
-
-
0030670238
-
Chemical shift mapping of Si L and K edges using spatially resolved EELS and energy-filtering TEM
-
167
-
K. Kimoto, T. Sekiguchi, T. Ayoama,: Chemical shift mapping of Si L and K edges using spatially resolved EELS and energy-filtering TEM, J. Electron. Microsc. 46, 369 (1997) 167
-
(1997)
J. Electron. Microsc.
, vol.46
, pp. 369
-
-
Kimoto, K.1
Sekiguchi, T.2
Ayoama, T.3
-
53
-
-
1142276029
-
Study of the chemical and structural organization of SIPOS films at the nanometer scale by TEM-EELS and XPS
-
167
-
S. Schamm, R. Berjoan, P. Barathieu: Study of the chemical and structural organization of SIPOS films at the nanometer scale by TEM-EELS and XPS, Mat. Sci. Eng. B 107, 58 (2004) 167
-
(2004)
Mat. Sci. Eng. B
, vol.107
, pp. 58
-
-
Schamm, S.1
Berjoan, R.2
Barathieu, P.3
-
55
-
-
4644370909
-
Spectroscopic studies of metal high-k dielectrics: Transition metal oxides and silicates, and complex rare earth/transition metal oxides
-
167
-
G. Lucovsky, J. G. Hong, C. C. Fulton, Y. Zou, R. J. Nemanich, H. Ade, D. G. Scholm, J. L. Freeouf: Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides, Phys. Stat. Sol. B 241, 2221 (2004) 167
-
(2004)
Phys. Stat. Sol. B
, vol.241
, pp. 2221
-
-
Lucovsky, G.1
Hong, J.G.2
Fulton, C.C.3
Zou, Y.4
Nemanich, R.J.5
Ade, H.6
Scholm, D.G.7
Freeouf, J.L.8
-
56
-
-
0029121538
-
Delocalization in inelastic scattering
-
169
-
D. A. Muller, J. Silcox: Delocalization in inelastic scattering, Ultramicroscopy 59, 195 (1995) 169
-
(1995)
Ultramicroscopy
, vol.59
, pp. 195
-
-
Muller, D.A.1
Silcox, J.2
-
59
-
-
0037188081
-
3 thin films grown on Si (100) investigated by combinatorial method
-
172
-
3 thin films grown on Si (100) investigated by combinatorial method, Appl. Surf. Sci. 189, 307 (2002) 172
-
(2002)
Appl. Surf. Sci.
, vol.189
, pp. 307
-
-
Ahmet, P.1
Koida, T.2
Takakura, M.3
Nakajima, K.4
Yoshimoto, M.5
Koinuma, H.6
Tanaka, M.7
Takegushi, M.8
Chikyow, T.9
|