Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Lichtenwalner, Daniel J ^a   Jur, Jesse S ^a   Kingon, Angus I ^a   Agustin, Melody P ^b   Yang, Yan ^b   Stemmer, Susanne ^b   Goncharova, Lyudmila V ^c   Gustafsson, Torgny ^c   Garfunkel, Eric ^c  

^a North Carolina State University   (United States)

^b University of California   (United States)

^c RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT OXIDE THICKNESS (EOT); GATE ELECTRIC THICKNESS; METAL-INSULATOR-SEMICONDUCTOR (MIS); SILICA LAYERS;

AMORPHOUS FILMS; DIELECTRIC DEVICES; EVAPORATION; LANTHANUM COMPOUNDS; MISFET DEVICES; SILICA; SPECTROSCOPY; SURFACE CHEMISTRY; THERMODYNAMIC STABILITY; THIN FILMS;

OXIDES;

EID: 23844503318     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1988967     Document Type: Article

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