Process and material properties of HfLaOx prepared by atomic layer deposition

Journal of the Electrochemical Society

Volumn 155, Issue 10, 2008, Pages

  He, Wei ^a   Chan, Daniel S H ^a   Kim, Sun Jung ^b   Kim, Young Sun ^b   Kim, Sung Tae ^b   Cho, Byung Jin ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b SAMSUNG Electronics   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; ELECTRIC PROPERTIES; ERROR ANALYSIS; HAFNIUM; LANTHANUM; LEAKAGE CURRENTS; LOGIC CIRCUITS; METALLIC COMPOUNDS; METALS; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; MOS DEVICES; OZONE WATER TREATMENT; PHOTOELECTRON SPECTROSCOPY; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SCALE (DEPOSITS); SEMICONDUCTOR MATERIALS; X RAY PHOTOELECTRON SPECTROSCOPY;

BREAKDOWN FIELDS; CIRCUIT APPLICATIONS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; COMPOSITION RATIOS; ELECTRICAL PROPERTIES; ENERGY-BAND GAPS; HIGH TEMPERATURES; HIGH-RESOLUTION X-RAY; LANTHANUM OXIDES; LOW-LEAKAGE CURRENT; MATE RIAL PROPERTIES; VALANCE BAND;

ATOMIC LAYER DEPOSITION;

EID: 51849101192     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2960995     Document Type: Article

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