Cubic-structured HfO2 with optimized doping of lanthanum for higher dielectric constant

IEEE Electron Device Letters

Volumn 30, Issue 6, 2009, Pages 623-625

  He, Wei ^a   Zhang, Lu ^a   Chan, Daniel S H ^a   Cho, Byung Jin ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Crystallization; Cubic structure; Hafnium oxide; High dielectric; Lanthanum oxide

Indexed keywords

ANNEALING TEMPERATURES; CUBIC STRUCTURE; DIELECTRIC CONSTANTS; HAFNIUM OXIDE; LANTHANUM OXIDE; ORDER OF MAGNITUDE;

CRYSTALLIZATION; DIELECTRIC MATERIALS; ELECTRIC FIELDS; HAFNIUM; LANTHANUM; LANTHANUM ALLOYS; OXIDES;

HAFNIUM COMPOUNDS;

EID: 67649378973     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2020613     Document Type: Article

References (12)

1. X. Zhao and D. Vanderbilt, "First-principles study of structural vibrational, and lattice dielectric properties of hafnium oxide," Phys. Rev. B, Condens. Matter, vol. 65, no. 23, p. 233 106, Jun. 2002.
2. G.-M. Rignanese, X. Gonze, G. Jun, K. Cho, and A. Pasquarello, "First-principles investigation of high-κ dielectrics: Comparison between the silicates and oxides of hafnium and zirconium," Phys. Rev. B, Condens. Matter, vol. 69, no. 18, p. 184 301, May 2004.
3. A. Navrotsky and S. V. Ushakov, Materials Fundamentals of Gate Dielectrics, A. A. Demkov and A. Navrotsky, Eds. Dordrecht, The Netherlands: Springer-Verlag, 2005, ch. 3, p. 57.
4. 2 admixture enabling thermally stable metal-insulator-metal capacitors," Appl. Phys. Lett., vol. 91, no. 7, p. 072 902, Aug. 2007.
5. 2 for sub-45-nm metal-insulator-semiconductor devices," Appl. Phys. Lett., vol. 91, no. 6, p. 062 906, Aug. 2007.
6. C. Adelmann, V. Sriramkumar, S. Van Elshocht, P. Lehnen, T. Conard, and S. De Gendt, "Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films," Appl. Phys. Lett., vol. 91, no. 16, p. 162 902, Oct. 2007.
7. 2," Appl. Phys. Lett., vol. 89, no. 14, p. 142 902, Oct. 2006.
8. 2 through structural phase transformation," Appl. Phys. Lett., vol. 86, no. 10, p. 102 906, Mar. 2005.
9. x films for an amorphous high-κ gate insulator," Appl. Phys. Lett., vol. 89, no. 3, p. 032 903, Jul. 2006.
10. x prepared by atomic layer deposition," J. Electrochem. Soc., vol. 155, no. 10, pp. 189-193, 2008.
11. 7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy," Appl. Phys. Lett., vol. 85, no. 15, pp. 3205-3207, Oct. 2004.
12. 2 gate oxide replacement," Mater. Sci. Eng. B, vol. 109, no. 1-3, pp. 85-88, Jun. 2004.