Surface defects and passivation of Ge and III-V interfaces

MRS Bulletin

Volumn 34, Issue 7, 2009, Pages 504-513

  Houssa, Michel ^a   Chagarov, Evgueni ^a   Kummel, Andrew ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATE DIELECTRICS; GERMANIUM; INTERFACE STATES; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; PASSIVATION; SEMICONDUCTING SILICON; SILICON COMPOUNDS;

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; ELECTRICAL PASSIVATION; EXPERIMENTAL CHARACTERIZATION; FIRST-PRINCIPLES SIMULATIONS; HIGH MOBILITY CHANNELS; INTERFACE DEFECTS; SI-BASED DEVICES; STATE OF THE ART;

SURFACE DEFECTS;

EID: 69249166279     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2009.138     Document Type: Article

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