Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (0 0 1)

Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 415-418

  Wiemer, C ^a   Baldovino, S ^a,b   Lamagna, L ^a   Perego, M ^a   Schamm Chardon, S ^c   Fanciulli, M ^a,b  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

Conductance method; Doped HfO2; Interface defect density; Microstrain; X ray diffraction

Indexed keywords

ANNEALED FILMS; CONDUCTANCE MEASUREMENT; CONDUCTANCE METHOD; CRYSTALLOGRAPHIC PHASE; DOPED-HFO2; ER-DOPED; FLUORITE STRUCTURE; GE DIFFUSION; GE(0 0 1); INTERFACE DEFECT DENSITY; INTERFACE DEFECTS; INTERFACIAL REGION; LOW TEMPERATURES; MICRO-STRAIN; NATIVE OXIDES; SECONDARY IONS; STRUCTURAL AND ELECTRICAL PROPERTIES; STRUCTURAL DISCONTINUITY; TIME OF FLIGHT;

ANNEALING; ATOMIC LAYER DEPOSITION; DEFECTS; DEPOSITION; DIFFRACTION; ELECTRIC PROPERTIES; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; ERBIUM; FLUORSPAR; GERMANIUM; HAFNIUM COMPOUNDS; OXIDE FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

DEFECT DENSITY;

EID: 79751524630     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.10.032     Document Type: Conference Paper

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