Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6100-6105

  Kita, Koji ^a   Takahashi, Toshitake ^a   Nomura, Hideyuki ^a   Suzuki, Sho ^a   Nishimura, Tomonori ^a   Toriumi, Akira ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Dielectric thin films; Metal insulator semiconductor structures; Microelectronics

Indexed keywords

GERMANIUM OXIDES; LANTHANUM COMPOUNDS; METAL INSULATOR BOUNDARIES; MICROELECTRONICS; MIS DEVICES; QUALITY CONTROL; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES;

ANNEALING PROCESS; DIELECTRIC THIN FILMS; HIGH-K MATERIALS; INTERFACE DEFECTS; INTERFACE PROPERTY; INTERFACE QUALITY; METAL INSULATOR SEMICONDUCTOR STRUCTURES; METAL-INSULATOR-SEMICONDUCTORS;

HIGH-K DIELECTRIC;

EID: 45049083001     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.158     Document Type: Article

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