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Volumn 95, Issue 2, 2009, Pages

Ge-based interface passivation for atomic layer deposited La-doped ZrO 2 on III-V compound (GaAs, In0.15Ga0.85As) substrates

(6) Molle, Alessandro a Brammertz, Guy b Lamagna, Luca a Fanciulli, Marco a,c Meuris, Marc b Spiga, Sabina a

a LABORATORIO MDM (Italy)

b IMEC (Belgium)

c UNIVERSITY OF MILANO BICOCCA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CONDUCTANCE MEASUREMENT; DIRECT GROWTH; ELECTRICAL QUALITY; GAAS; III-V COMPOUNDS; INTERFACE COMPOSITION; INTERFACE PASSIVATION; OXYGEN BONDING;

ATOMS; GALLIUM ALLOYS; GERMANIUM; LANTHANUM; OXYGEN; PASSIVATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SUBSTRATES; ZIRCONIUM ALLOYS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67650742297 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3182734 Document Type: Article

Times cited : (27)

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