Metal-oxide-high- k -oxide-silicon memory structure incorporating a Tb 2 O3 charge trapping layer

Applied Physics Letters

Volumn 97, Issue 1, 2010, Pages

  Pan, Tung Ming ^a   Jung, Ji Shing ^a   Chen, Fa Hsyang ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE LOSS; DATA RETENTION; DEEP TRAPS; HIGH DIELECTRIC CONSTANTS; HIGH PROBABILITY; MEMORY STRUCTURE; MEMORY WINDOW; METAL-OXIDE; PROGRAM/ERASE;

CHARGE TRAPPING; TERBIUM ALLOYS;

FLASH MEMORY;

EID: 77954701725     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3462321     Document Type: Article

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