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Volumn 12, Issue 2-3, 2006, Pages 158-164

Atomic layer deposition and properties of lanthanum oxide and lanthanum-aluminum oxide films

(10) Kukli, Kaupo a,b Ritala, Mikko a Pore, Viljami a Leskelä, Markku a Sajavaara, Timo c Hegde, Rama I d Gilmer, David C d Tobin, Philip J d Jones, Anthony C e,f Aspinall, Helen C e,f

a UNIVERSITY OF HELSINKI (Finland)

b UNIVERSITY OF TARTU (Estonia)

c UNIVERSITY OF LEUVEN (Belgium)

d FREESCALE SEMICONDUCTOR INC (United States)

e UNIVERSITY OF LIVERPOOL (United Kingdom)

f Epichem Ltd (United Kingdom)

Author keywords

Atomic layer deposition; Capacitors; Dielectrics; Lanthanides; Metal oxide semiconductor devices

Indexed keywords

ALUMINA; CAPACITORS; DEPOSITION; DIELECTRIC MATERIALS; EVAPORATION; GLASS; MOS DEVICES; RARE EARTH ELEMENTS; SILICON; STOICHIOMETRY;

ATOMIC LAYER DEPOSITION; PRECURSOR EVAPORATION TEMPERATURE; SUBSTRATE TEMPERATURE;

LANTHANUM COMPOUNDS;

EID: 33645574909 PISSN: 09481907 EISSN: 15213862 Source Type: Journal
DOI: 10.1002/cvde.200506388 Document Type: Article

Times cited : (59)

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